Three-dimensional memory devices having transferred interconnect layer and methods for forming the same

ABSTRACT

Embodiments of three-dimensional (3D) memory devices and methods for forming the 3D memory devices are disclosed. In an example, a method for forming a 3D memory device is disclosed. A memory stack including interleaved sacrificial layers and dielectric layers is formed above a first substrate. A channel structure extending vertically through the memory stack is formed. A single-crystal silicon layer is formed in a second substrate. An interconnect layer including a bit line is formed on the single-crystal silicon layer above the second substrate. The single-crystal silicon layer and the interconnect layer formed thereon are transferred from the second substrate onto the memory stack above the first substrate, such that the bit line in the interconnect layer is electrically connected to the channel structure.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of International Application No.PCT/CN2019/081957, filed on Apr. 9, 2019, entitled “THREE-DIMENSIONALMEMORY DEVICES HAVING TRANSFERRED INTERCONNECT LAYER AND METHODS FORFORMING THE SAME,” which claims the benefit of priority to ChinesePatent Application No. 201811547690.7 filed on Dec. 18, 2018, both ofwhich are incorporated herein by reference in their entireties. Thisapplication is also related to U.S. application Ser. No. 16/453,927,filed on even date, entitled “MULTI-DECK THREE-DIMENSIONAL MEMORYDEVICES AND METHODS FOR FORMING THE SAME,” and U.S. application Ser. No.16/453,946, filed on even date, entitled “MULTI-STACK THREE-DIMENSIONALMEMORY DEVICES AND METHODS FOR FORMING THE SAME,” both of which areincorporated therein by reference in their entireties.

BACKGROUND

Embodiments of the present disclosure relate to three-dimensional (3D)memory devices and fabrication methods thereof.

Planar memory cells are scaled to smaller sizes by improving processtechnology, circuit design, programming algorithm, and fabricationprocess. However, as feature sizes of the memory cells approach a lowerlimit, planar process and fabrication techniques become challenging andcostly. As a result, memory density for planar memory cells approachesan upper limit.

A 3D memory architecture can address the density limitation in planarmemory cells. The 3D memory architecture includes a memory array andperipheral devices for controlling signals to and from the memory array.

SUMMARY

Embodiments of 3D memory devices and fabrication methods thereof aredisclosed herein.

In one example, a method for forming a 3D memory device is disclosed. Amemory stack including interleaved sacrificial layers and dielectriclayers is formed above a first substrate. A channel structure extendingvertically through the memory stack is formed. A single-crystal siliconlayer is formed in a second substrate. An interconnect layer including abit line is formed on the single-crystal silicon layer above the secondsubstrate. The single-crystal silicon layer and the interconnect layerformed thereon are transferred from the second substrate onto the memorystack above the first substrate, such that the bit line in theinterconnect layer is electrically connected to the channel structure.

In another example, a method for forming a 3D memory device isdisclosed. A semiconductor device is formed above a first substrate. Asingle-crystal silicon layer is formed in a second substrate. Aninterconnect layer including an interconnect is formed on thesingle-crystal silicon layer above the second substrate. Thesingle-crystal silicon layer and the interconnect layer formed thereonare transferred from the second substrate onto the semiconductor deviceabove the first substrate, such that the interconnect is electricallyconnected to the semiconductor device, and the single-crystal siliconlayer becomes above the interconnect layer. A memory stack includinginterleaved sacrificial layers and dielectric layers is formed above thesingle-crystal silicon layer. A channel structure extending verticallythrough the memory stack is formed. The channel structure includes alower plug extending into the single-crystal silicon layer and includingsingle-crystal silicon.

In still another example, a 3D memory device includes a substrate, afirst memory stack above the substrate, a first channel structureextending vertically through the first memory stack, an interconnectlayer above the first memory stack, a bonding interface between thefirst memory stack and the interconnect layer, and a single-crystalsilicon layer on the interconnect layer. The first memory stack includesa first plurality of interleaved conductor layers and dielectric layers.The interconnect layer includes a first bit line electrically connectedto the first channel structure.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated herein and form a partof the specification, illustrate embodiments of the present disclosureand, together with the description, further serve to explain theprinciples of the present disclosure and to enable a person skilled inthe pertinent art to make and use the present disclosure.

FIG. 1A illustrates a cross-section of one example of a multi-stack 3Dmemory device, according to some embodiments of the present disclosure.

FIG. 1B illustrates a cross-section of another example of themulti-stack 3D memory device, according to some embodiments of thepresent disclosure.

FIG. 1C illustrates a cross-section of still another example of themulti-stack 3D memory device, according to some embodiments of thepresent disclosure.

FIG. 2 illustrates a cross-section of an exemplary multi-stack 3D memorydevice having transferred interconnect layers, according to someembodiments of the present disclosure.

FIG. 3 illustrates a cross-section of an exemplary multi-deck 3D memorydevice, according to some embodiments of the present disclosure.

FIGS. 4A-4J illustrate an exemplary fabrication process for forming amulti-deck 3D memory device, according to some embodiments of thepresent disclosure.

FIGS. 5A-5J illustrate an exemplary fabrication process for forming amulti-stack 3D memory device having transferred interconnect layers,according to some embodiments of the present disclosure.

FIGS. 6A-6C illustrate an exemplary fabrication process for forming amulti-stack 3D memory device, according to some embodiments of thepresent disclosure.

FIG. 7 is a flowchart of an exemplary method for forming a multi-deck 3Dmemory device, according to some embodiments of the present disclosure.

FIG. 8 is a flowchart of an exemplary method for transferring asingle-crystal silicon layer, according to some embodiments of thepresent disclosure.

FIG. 9 is a flowchart of an exemplary method for forming a multi-stack3D memory device having transferred interconnect layers, according tosome embodiments of the present disclosure.

FIG. 10 is a flowchart of an exemplary method for forming a multi-stack3D memory device, according to some embodiments of the presentdisclosure.

Embodiments of the present disclosure will be described with referenceto the accompanying drawings.

DETAILED DESCRIPTION

Although specific configurations and arrangements are discussed, itshould be understood that this is done for illustrative purposes only. Aperson skilled in the pertinent art will recognize that otherconfigurations and arrangements can be used without departing from thespirit and scope of the present disclosure. It will be apparent to aperson skilled in the pertinent art that the present disclosure can alsobe employed in a variety of other applications.

It is noted that references in the specification to “one embodiment,”“an embodiment,” “an example embodiment,” “some embodiments,” etc.,indicate that the embodiment described may include a particular feature,structure, or characteristic, but every embodiment may not necessarilyinclude the particular feature, structure, or characteristic. Moreover,such phrases do not necessarily refer to the same embodiment. Further,when a particular feature, structure or characteristic is described inconnection with an embodiment, it would be within the knowledge of aperson skilled in the pertinent art to effect such feature, structure orcharacteristic in connection with other embodiments whether or notexplicitly described.

In general, terminology may be understood at least in part from usage incontext. For example, the term “one or more” as used herein, dependingat least in part upon context, may be used to describe any feature,structure, or characteristic in a singular sense or may be used todescribe combinations of features, structures or characteristics in aplural sense. Similarly, terms, such as “a,” “an,” or “the,” again, maybe understood to convey a singular usage or to convey a plural usage,depending at least in part upon context. In addition, the term “basedon” may be understood as not necessarily intended to convey an exclusiveset of factors and may, instead, allow for existence of additionalfactors not necessarily expressly described, again, depending at leastin part on context.

It should be readily understood that the meaning of “on,” “above,” and“over” in the present disclosure should be interpreted in the broadestmanner such that “on” not only means “directly on” something but alsoincludes the meaning of “on” something with an intermediate feature or alayer therebetween, and that “above” or “over” not only means themeaning of “above” or “over” something but can also include the meaningit is “above” or “over” something with no intermediate feature or layertherebetween (i.e., directly on something).

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper,” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As used herein, the term “substrate” refers to a material onto whichsubsequent material layers are added. The substrate itself can bepatterned. Materials added on top of the substrate can be patterned orcan remain unpatterned. Furthermore, the substrate can include a widearray of semiconductor materials, such as silicon, germanium, galliumarsenide, indium phosphide, etc. Alternatively, the substrate can bemade from an electrically non-conductive material, such as a glass, aplastic, or a sapphire wafer.

As used herein, the term “layer” refers to a material portion includinga region with a thickness. A layer can extend over the entirety of anunderlying or overlying structure or may have an extent less than theextent of an underlying or overlying structure. Further, a layer can bea region of a homogeneous or inhomogeneous continuous structure that hasa thickness less than the thickness of the continuous structure. Forexample, a layer can be located between any pair of horizontal planesbetween, or at, a top surface and a bottom surface of the continuousstructure. A layer can extend horizontally, vertically, and/or along atapered surface. A substrate can be a layer, can include one or morelayers therein, and/or can have one or more layer thereupon, thereabove,and/or therebelow. A layer can include multiple layers. For example, aninterconnect layer can include one or more conductor and contact layers(in which interconnect lines and/or via contacts are formed) and one ormore dielectric layers.

As used herein, the term “nominal/nominally” refers to a desired, ortarget, value of a characteristic or parameter for a component or aprocess operation, set during the design phase of a product or aprocess, together with a range of values above and/or below the desiredvalue. The range of values can be due to slight variations inmanufacturing processes or tolerances. As used herein, the term “about”indicates the value of a given quantity that can vary based on aparticular technology node associated with the subject semiconductordevice. Based on the particular technology node, the term “about” canindicate a value of a given quantity that varies within, for example,10-30% of the value (e.g., ±10%, ±20%, or ±30% of the value).

As used herein, the term “3D memory device” refers to a semiconductordevice with vertically oriented strings of memory cell transistors(referred to herein as “memory strings,” such as NAND memory strings) ona laterally-oriented substrate so that the memory strings extend in thevertical direction with respect to the substrate. As used herein, theterm “vertical/vertically” means nominally perpendicular to the lateralsurface of a substrate.

In fabricating 3D NAND memory devices with advanced technologies, suchas having 96 or more levels, a multi-deck architecture is usually used,which includes two or more stacked channel structures that can beelectrically connected by inter-deck plugs (also known as “inter-deckjoints”). In some 3D NAND memory devices, a multi-stack architecture isused to further vertically scale up memory cells at memory stack levels,for example, by having multiple memory stacks each including channelstructures, local contacts, and interconnects, and that is built up uponan underneath source layer. The inter-deck plugs in the multi-deckarchitecture and/or the source layers in the multi-stack architecture,however, are made of polycrystalline silicon (polysilicon) usingdeposition processes, which is a semiconductor material known forcarrier mobility loss during long transport. The performances of the 3DNAND memory devices with the multi-deck and/or the multi-stackarchitectures are thus limited by the electric performance ofpolysilicon inter-deck plugs and/or source layers.

Another way of increasing 3D NAND memory cell density is bonding one ormore 3D NAND memory device chips and peripheral device chip using hybridbonding process. However, hybrid bonding process requires high alignmentaccuracy and may induce voids at the bonding interface due to metalmigration caused by thermal process, which can impact the device yield.Moreover, as the memory cell level and density increase, the density ofinterconnects, such as bit line density, are increased as well, therebyincreasing the fabrication complexity and cycle time.

Various embodiments in accordance with the present disclosure providevarious types of vertically-scalable 3D memory devices and methods forforming the 3D memory devices with improved performance, shortenedfabrication cycle, and higher yield compared with some other 3D memorydevices. A de-bonding process that transfers a single-crystal siliconlayer from a silicon substrate (known as a “donor substrate”) to amemory device structure can be used to form a multi-deck 3D memorydevice having single-crystal silicon inter-deck plugs or a multi-stack3D memory device having single-crystal silicon source layers. Byreplacing polysilicon with single-crystal silicon, which has highercarrier mobility, higher cell storage capacity with better cellperformance at inter-deck joint and source can be achieved. Thesingle-crystal silicon layer can be bonded to the memory devicestructure using a silicon-dielectric bonding process, which has a higheryield and bonding strength compared with hybrid bonding. Moreover,interconnects, such as bit lines, may be formed on dedicated donorsubstrates in parallel with memory device structure fabrication and thentransferred to the memory device structure using the de-bonding process,which can significantly shorten fabrication cycle time. In someembodiments, the silicon donor substrate from which the single-crystalsilicon layers and/or interconnects are transferred can be repeated usedto further save wafer cost.

FIG. 1A-1C illustrates different examples of cross-sections of anexemplary multi-stack 3D memory device 100, according to variousembodiments of the present disclosure. 3D memory device 100 can have amulti-stack architecture with stacked memory array device structureseach including a memory stack and an array of channel structures formedon a single-crystal silicon layer (e.g., as the source layer of thememory strings). 3D memory device 100 represents an example of anon-monolithic 3D memory device. The term “non-monolithic” means thatthe components of a 3D memory device (e.g., the peripheral device and/ormemory array devices) can be formed separately on different substratesand then joined, for example, by bonding techniques, to form the 3Dmemory device. As described below in detail, the bonding techniques,such as silicon-dielectric bonding, can be part of or combined with a“de-bonding” process that transfers a single-crystal silicon layer (withor without other structures formed thereon) between differentsubstrates. It is understood that the de-bonding process can provideflexibility of connecting any number of device structures in anyvertical arrangement to increase the cell density and production yieldof 3D memory device 100. It is also understood that memory array devicestructures (and memory stacks thereof) are vertically-scalable tofurther increase the cell density. It is further understood that theperipheral device layer and memory array device structures can bestacked in any order. For example, the peripheral device layer can bedisposed at the bottom, at the top, or in the middle of 3D memory device100.

As shown in FIG. 1A, 3D memory device 100 can include a substrate 102,which can include silicon (e.g., single-crystal silicon), silicongermanium (SiGe), gallium arsenide (GaAs), germanium (Ge), silicon oninsulator (SOI), or any other suitable materials. In some embodiments,3D memory device 100 includes a peripheral device layer 104 on substrate102. Peripheral device layer 104 can be formed “on” substrate 102, inwhich the entirety or part of peripheral device layer 104 is formed insubstrate 102 (e.g., below the top surface of substrate 102) and/ordirectly on substrate 102. Peripheral device layer 104 can include aplurality of transistors 106 formed on substrate 102. Isolation regions(e.g., shallow trench isolations (STIs)) and doped regions (e.g., sourceregions and drain regions) of transistors 106 can be formed in substrate102 as well.

Peripheral device layer 104 can include any suitable digital, analog,and/or mixed-signal peripheral circuits used for facilitating theoperation of 3D memory device 100. For example, peripheral device layer104 can include one or more of a data buffer (e.g., a bit line pagebuffer), a decoder (e.g., a row decoder or a column decoder), a senseamplifier, a driver (e.g., a word line driver), a charge pump, a currentor voltage reference, or any active or passive components of thecircuits (e.g., transistors, diodes, resistors, or capacitors). In someembodiments, peripheral device layer 104 is formed on substrate 102using complementary metal-oxide-semiconductor (CMOS) technology.

In some embodiments, peripheral device layer 104 includes a multiplexer.A multiplexer (also known as “MUX”) is a device that selects one ofseveral analog or digital input signals and forwards the selected inputinto a single line. In some embodiments, the multiplexer is configuredto select one of multiple channel structures in different memory stacksand forward the input from the selected channel structures into a databuffer and/or a driver, such as a bit line page buffer and/or a wordline driver. That is, the data buffer and driver of peripheral devicelayer 104 can be shared by multiple channel structures through themultiplexer.

3D memory device 100 can include an interconnect layer (also referred toherein as a “peripheral interconnect layer” 108) above peripheral devicelayer 104 to transfer electrical signals to and from peripheral devicelayer 104. Peripheral interconnect layer 108 can include a plurality ofinterconnects (also referred to herein as “contacts”), including lateralinterconnect lines and vertical interconnect access (via) contacts. Asused herein, the term “interconnects” can broadly include any suitabletypes of interconnects, such as middle-end-of-line (MEOL) interconnectsand back-end-of-line (BEOL) interconnects. Peripheral interconnect layer108 can further include one or more interlayer dielectric (ILD) layers(also known as “intermetal dielectric (IMD) layers”) in which theinterconnects can form. That is, peripheral interconnect layer 108 caninclude interconnects in multiple ILD layers. The interconnects inperipheral interconnect layer 108 can include conductive materialsincluding, but not limited to, tungsten (W), cobalt (Co), copper (Cu),aluminum (Al), silicides, or any combination thereof. The ILD layers inperipheral interconnect layer 108 can include dielectric materialsincluding, but not limited to, silicon oxide, silicon nitride, siliconoxynitride, low dielectric constant (low-k) dielectrics, or anycombination thereof.

3D memory device 100 can include a plurality of memory array devicestructures 110, 112, and 114 stacked above peripheral device layer 104and peripheral interconnect layer 108. It is noted that x and y axes areadded in FIG. 1A to further illustrate the spatial relationship of thecomponents in 3D memory device 100. Substrate 102 includes two lateralsurfaces (e.g., a top surface and a bottom surface) extending laterallyin the x-direction (the lateral direction). As used herein, whether onecomponent (e.g., a layer or a device) is “on,” “above,” or “below”another component (e.g., a layer or a device) of a semiconductor device(e.g., 3D memory device 100) is determined relative to the substrate ofthe semiconductor device (e.g., substrate 102) in the y-direction (thevertical direction) when the substrate is positioned in the lowest planeof the semiconductor device in the y-direction. The same notion fordescribing spatial relationship is applied throughout the presentdisclosure.

In some embodiments, 3D memory device 100 is a NAND Flash memory devicein which memory cells are provided in the form of an array of NANDmemory strings. Each array of NAND memory strings can be formed in amemory stack, and each NAND memory string can include one channelstructure or multiple cascaded channel structures. As shown in FIG. 1A,3D memory device 100 can include three memory array device structures110, 112, and 114 stacked above peripheral device layer 104 andperipheral interconnect layer 108. Each memory array device structure110, 112, or 114 can include a single-crystal silicon layer in which thesources of NAND memory strings are formed (also referred to herein as“single-crystal silicon source layer”), a memory stack on thesingle-crystal silicon source layer, and an array of channel structureseach extending vertically through the memory stack and into thesingle-crystal silicon source layer. Each memory array device structure110, 112, or 114 can further include an interconnect layer (alsoreferred to herein as “array interconnect layer”), which includes bitlines, above the respective memory stack and channel structures. It isunderstood that 3D memory device 100 may include less than or more thanthree memory array device structures above peripheral device layer 104and peripheral interconnect layer 108 in other embodiments.

As shown in FIG. 1A, first memory array device structure 110 of 3Dmemory device 100 can include a first single-crystal silicon layer 118,a first memory stack 120, an array of first channel structures 122, anda first array interconnect layer 140. In some embodiments, firstsingle-crystal silicon layer 118 is transferred from another substrateother than substrate 102 (a donor substrate) and bonded onto peripheralinterconnect layer 108 above peripheral device layer 104. As a result,first memory array device structure 110 can also include a first bondinginterface 116 between substrate 102 and first single-crystal siliconlayer 118. In some embodiments, first bonding interface 116 is the placeat which peripheral interconnect layer 108 and first single-crystalsilicon layer 118 are met and bonded. In practice, first bondinginterface 116 can be a layer with a certain thickness that includes thetop surface of peripheral interconnect layer 108 and the bottom surfaceof first single-crystal silicon layer 118.

First single-crystal silicon layer 118 can be disposed above firstbonding interface 116 and peripheral interconnect layer 108. Firstsingle-crystal silicon layer 118 can include single-crystal silicon, forexample, can be fully made of single-crystal silicon, which has superiorelectric performances (e.g., higher carrier mobility) than silicon inother forms, such as polysilicon or amorphous silicon. In someembodiments, first single-crystal silicon layer 118 includes compoundmaterials formed from single-crystal silicon, such as metal silicidesthat have silicon with metal elements including, but not limited to,titanium silicide, cobalt silicide, nickel silicide, tungsten silicide,etc. First single-crystal silicon layer 118 can function as the commonsource of array of first channel structures 122.

In some embodiments, the thickness of first single-crystal silicon layer118 is between about 1 μm and about 100 μm, such as between 1 μm and 100μm (e.g., 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm,15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 55 μm, 60 μm, 65μm, 70 μm, 75 μm, 80 μm, 85 μm, 90 μm, 95 μm, 100 μm, any range boundedby the lower end by any of these values, or any range defined by any twoof these values). In some embodiments, as the base on which first memorystack 120 can form, first single-crystal silicon layer 118 extendslaterally along at least the width of first memory stack 120 (e.g., inthe x-direction as shown in FIG. 1A). It is understood that the initiallateral dimensions of first single-crystal silicon layer 118 may bedetermined by the lateral dimensions of the donor substrate from whichfirst single-crystal silicon layer 118 is transferred and may be changedafter being bonded above substrate 102, for example, by patterning andetching first single-crystal silicon layer 118.

In some embodiments, first memory array device structure 110 includesfirst channel structures 122 each of which extends vertically through afirst plurality of pairs each including a conductor layer and adielectric layer (referred to herein as “conductor/dielectric layerpairs”). The stacked conductor/dielectric layer pairs are also referredto herein as first memory stack 120. The interleaved conductor layersand dielectric layers in first memory stack 120 alternate in thevertical direction, according to some embodiments. In other words,except the ones at the top or bottom of first memory stack 120, eachconductor layer can be adjoined by two dielectric layers on both sides,and each dielectric layer can be adjoined by two conductor layers onboth sides. The conductor layers in first memory stack 120 can includeconductive materials including, but not limited to, W, Co, Cu, Al, dopedsilicon, silicides, or any combination thereof. The dielectric layers infirst memory stack 120 can include dielectric materials including, butnot limited to, silicon oxide, silicon nitride, silicon oxynitride, orany combination thereof.

In some embodiments, 3D memory device 100 is a NAND Flash memory devicein which memory cells are provided in the form of NAND memory strings,such as “charge trap” type of NAND memory string. Each first channelstructure 122 can include a composite dielectric layer (also known as a“memory film” 124) and a semiconductor channel 126. In some embodiments,semiconductor channel 126 includes silicon, such as amorphous silicon,polysilicon, or single-crystal silicon. In some embodiments, memory film124 includes a tunneling layer, a storage layer (also known as “chargetrap layer”), and a blocking layer. Memory film 124 and semiconductorchannel 126 are formed along the sidewall of first channel structure122, according to some embodiments. Each first channel structure 122 canhave a cylinder shape (e.g., a pillar shape). Semiconductor channel 126,the tunneling layer, the storage layer, and the blocking layer of memoryfilm 124 are arranged along the radial direction from the center towardthe outer surface of the pillar in this order, according to someembodiments. The tunneling layer can include silicon oxide, siliconoxynitride, or any combination thereof. The storage layer can includesilicon nitride, silicon oxynitride, silicon, or any combinationthereof. The blocking layer can include silicon oxide, siliconoxynitride, high dielectric constant (high-k) dielectrics, or anycombination thereof. In one example, the blocking layer can include acomposite layer of silicon oxide/silicon oxynitride/silicon oxide (ONO).In another example, the blocking layer can include a high-k dielectriclayer, such as an aluminum oxide (Al₂O₃), or hafnium oxide (HfO₂) ortantalum oxide (Ta₂O₅) layer, and so on.

In some embodiments, first channel structures 122 further include aplurality of control gates (each being part of a word line). Eachconductor layer in first memory stack 120 can act as a control gate foreach memory cell of first channel structure 122. Each first channelstructure 122 can include an upper plug 128 at its upper end and a lowerplug 130 at its lower end. That is, semiconductor channel 126 isdisposed vertically between and in contact with upper plug 128 and lowerplug 130, respectively, according to some embodiments. As used herein,the “upper end” of a component (e.g., first channel structure 122) isthe end farther away from substrate 102 in the y-direction, and the“lower end” of the component (e.g., first channel structure 122) is theend closer to substrate 102 in the y-direction.

In some embodiments, upper plug 128 includes semiconductor materials,such as polysilicon, and works as the drain of first channel structure122. In some embodiments, lower plug 130 extends into firstsingle-crystal silicon layer 118, i.e., below the top surface of firstsingle-crystal silicon layer 118. Lower plug 130 includes semiconductormaterials and works as part of the source of first channel structure122, according to some embodiments. As shown in FIG. 1A, array of firstchannel structures 122 can share a common source, i.e., firstsingle-crystal silicon layer 118, by contacting lower plugs 130 withfirst single-crystal silicon layer 118. In some embodiments, lower plug130 is a selective epitaxial growth (SEG) plug epitaxially grown fromfirst single-crystal silicon layer 118 at the lower end of first channelstructure 122. As a SEG plug, lower plug 130 includes the same materialas first single-crystal silicon layer 118, i.e., single-crystal silicon,according to some embodiments.

In some embodiments, first memory array device structure 110 furtherincludes a slit structure 132 (e.g., a gate line slit (“GLS”)) thatextends vertically through first memory stack 120 to firstsingle-crystal silicon layer 118. Slit structure 132 can be used to formthe conductor/dielectric layer pairs in first memory stack 120 by a gatereplacement process. In some embodiments, slit structure 132 is firstlyfilled with dielectric materials, for example, silicon oxide, siliconnitride, or any combination thereof, for separating array of firstchannel structures 122 into different regions (e.g., memory fingersand/or memory blocks). Then, slit structure 132 can be filled withconductive and/or semiconductor materials, for example, W, Co,polysilicon, or any combination thereof as a source conductor in contactwith first single-crystal silicon layer 118 for electrically controllingan array common source (ACS).

As shown in FIG. 1A, first memory array device structure 110 can furtherinclude a through array contact (TAC) 134 extending vertically throughfirst memory stack 120. TAC 134 can extend through the entire thicknessof first memory stack 120. In some embodiments, TAC 134 further extendsthrough at least part of first single-crystal silicon layer 118. TAC 134can carry electrical signals from and/or to first memory array devicestructure 110, such as part of the power bus, with shortenedinterconnect routing. In some embodiments, TAC 134 is electricallyconnected to peripheral device layer 104 to provide electricalconnections between peripheral device layer 104 (e.g., transistors 106)and first channel structures 122. TAC 134 can also provide mechanicalsupport to first memory stack 120. In some embodiments, TAC 134 includesa vertical opening through first memory stack 120, which is filled withconductive materials, including, but not limited to, W, Co, Cu, Al,doped silicon, silicides, or any combination thereof.

In some embodiments, first memory stack 120 includes a staircasestructure at one side of first memory stack 120 in the lateral directionto fan-out the word lines (e.g., parts of the conductor layers of firstmemory stack 120). The staircase structure can tilt toward the center offirst memory stack 120 to fan-out the word lines in the verticaldirection away from first single-crystal silicon layer 118 (e.g., thepositive y-direction in FIG. 1A). First memory array device structure110 further includes local contacts to electrically connect firstchannel structures 122 to first array interconnect layer 140, accordingto some embodiments. In some embodiments, as part of the local contacts,bit line contacts 136 are each in contact with the drain of respectivefirst channel structure 122, such as upper plug 128, for individuallyaddressing corresponding first channel structure 122. In someembodiments, as part of the local contacts, word line contacts 138extend vertically within one or more ILD layers. Each word line contact138 can have an upper end in contact with first array interconnect layer140 and a lower end in contact with a corresponding conductor layer infirst memory stack 120 at the staircase structure to individuallyaddress a corresponding word line of first channel structures 122. Insome embodiments, the local contacts, including bit line contacts 136and word line contacts 138, include contact holes and/or contacttrenches filled with conductive materials, such as W, Co, Cu, Al,silicides, or any combination thereof.

First array interconnect layer 140 can be disposed above first memorystack 120 and first channel structures 122 therethrough to transferelectrical signals to and from first channel structures 122. First arrayinterconnect layer 140 can include a plurality of interconnects, such asinterconnect lines and via contacts, formed in one or more ILD layers.The interconnects in first array interconnect layer 140 can includeconductive materials including, but not limited to, W, Co, Cu, Al,silicides, or any combination thereof. The ILD layers in first arrayinterconnect layer 140 can include dielectric materials including, butnot limited to, silicon oxide, silicon nitride, silicon oxynitride,low-k dielectrics, or any combination thereof.

In some embodiments, first array interconnect layer 140 includes a firstbit line 142 disposed above and electrically connected to first channelstructure 122. The drain at the upper end of first channel structure122, e.g., upper plug 128, can be electrically connected to first bitline 142 through bit line contact 136. First bit line 142 can beelectrically connected to peripheral device layer 104, such as amultiplexer, through a through silicon via (TSV) 145 and theinterconnects in peripheral interconnect layer 108. As a result, firstchannel structure 122 can be electrically connected to peripheral devicelayer 104 through first bit line 142. First bit line 142 and TSV 145 caninclude conductive materials, such as W, Co, Cu, and Al, formed in oneor more ILD layers above first bonding interface 116. In someembodiments, first array interconnect layer 140 further includes apassivation layer 144 (e.g., an ILD layer) formed on first bit line 142as the top layer of first memory array device structure 110 to protectfirst bit line 142 and reduce electric coupling effect and currentleakage between the interconnects in first array interconnect layer 140,such as first bit line 142, and components formed above first arrayinterconnect layer 140. Passivation layer 144 can include dielectricmaterials including, but not limited to, silicon oxide, silicon nitride,silicon oxynitride, low-k dielectrics, or any combination thereof. It isunderstood that passivation layer 144 may not be needed in otherembodiments as described below in detail.

First memory array device structure 110 can be formed by transferringfirst single-crystal silicon layer 118 from another donor substrate tosubstrate 102 using a de-bonding process, followed by forming othercomponents, such as first memory stack 120, first channel structures122, slit structure 132, TAC 134, the local contacts (e.g., word linecontacts 138 and bit line contacts 136), and first array interconnectlayer 140, above first single-crystal silicon layer 118. As describedabove, 3D memory device 100 can be vertically-scalable by includingmultiple memory array device structures stacked vertically, such assecond memory array device structure 112 stacked above first memoryarray device structure 110. Similar to first memory array devicestructure 110, second memory array device structure 112 can include asecond single-crystal silicon layer 148 disposed above first arrayinterconnect layer 140, a second memory stack 150 disposed above secondsingle-crystal silicon layer 148, an array of second channel structures152 each extending vertically through second memory stack 150 and intosecond single-crystal silicon layer 148, and a second array interconnectlayer 156 disposed above second memory stack 150 and including a secondbit line 158. A second bonding interface 146 can be formed between firstarray interconnect layer 140 and second single-crystal silicon layer 148as a result of bonding second single-crystal silicon layer 148 ontofirst memory array device structure 110.

Similar to first single-crystal silicon layer 118 in first memory arraydevice structure 110, second single-crystal silicon layer 148 caninclude single-crystal silicon, for example, can be fully made ofsingle-crystal silicon, which has superior electric performances (e.g.,higher carrier mobility) than silicon in other forms, such aspolysilicon or amorphous silicon. In some embodiments, secondsingle-crystal silicon layer 148 includes compound materials formed fromsingle-crystal silicon, such as metal silicides that have silicon withmetal elements including, but not limited to, titanium silicide, cobaltsilicide, nickel silicide, tungsten silicide, etc. Second single-crystalsilicon layer 148 can function as the common source of array of secondchannel structures 152.

In some embodiments, the thickness of second single-crystal siliconlayer 148 is between about 1 μm and about 100 μm, such as between 1 μmand 100 μm (e.g., 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm,10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 55 μm, 60μm, 65 μm, 70 μm, 75 μm, 80 μm, 85 μm, 90 μm, 95 μm, 100 μm, any rangebounded by the lower end by any of these values, or any range defined byany two of these values). In some embodiments, as the base on whichsecond memory stack 150 can form, second single-crystal silicon layer148 extends laterally along at least the width of second memory stack150 (e.g., in the x-direction as shown in FIG. 1A). It is understoodthat the initial lateral dimensions of second single-crystal siliconlayer 148 may be determined by the lateral dimensions of the donorsubstrate from which second single-crystal silicon layer 148 istransferred and may be changed after being bonded above first arrayinterconnect layer 140, for example, by patterning and etching secondsingle-crystal silicon layer 148. The lateral dimensions of first andsecond single-crystal silicon layers 118 and 148 may be the same ordifferent.

In some embodiments, second single-crystal silicon layer 148 istransferred from the same donor substrate from which firstsingle-crystal silicon layer 118 is transferred to save wafer cost. Itis understood that first and second single-crystal silicon layers 118and 148 may be formed and transferred in parallel from two differentdonor substrates, respectively, to substrate 102 to further reducefabrication cycle time in other embodiments. As a result of thede-bonding process performed again to bond second single-crystal siliconlayer 148 onto first memory array device structure 110, second bondinginterface 146 can be formed between first array interconnect layer 140and second single-crystal silicon layer 148. In some embodiments, secondbonding interface 146 is the place at which first array interconnectlayer 140 and second single-crystal silicon layer 148 are met andbonded. In practice, second bonding interface 146 can be a layer with acertain thickness that includes the top surface of first arrayinterconnect layer 140 and the bottom surface of second single-crystalsilicon layer 148.

In some embodiments, second single-crystal silicon layer 148 is disposeddirectly on first bit line 142 in first array interconnect layer 140without passivation layer 144 in-between. The same effect of reducingelectric coupling and leakage between first array interconnect layer 140and second memory stack 150 (and second channel structures 152) can beachieved by, for example, adjusting the thickness of secondsingle-crystal silicon layer 148 and/or forming a well in secondsingle-crystal silicon layer 148 by any suitable dopants at a desireddoping level. Thus, second single-crystal silicon layer 148 can includea well between first array interconnect layer 140 and second memorystack 150.

Similar to the counterparts in first memory array device structure 110,second memory stack 150 can include a second plurality ofconductor/dielectric layer pairs, i.e., interleaved conductor layers anddielectric layers, and second channel structure 152 can be a “chargetrap” type of NAND memory string as described above in detail. In someembodiments, each second channel structure 152 includes a lower plug154, such as a SEG plug, extending into second single-crystal siliconlayer 148 as part of the source of the NAND memory string. Lower plug154 can be epitaxially grown from second single-crystal silicon layer148 at the lower end of second channel structure 152 and includesingle-crystal silicon, the same material as second single-crystalsilicon layer 148. Second single-crystal silicon layer 148 can thus workas the source layer of array of second channel structures 152.

Similar to the counterparts in first memory array device structure 110,second memory array device structure 112 of 3D memory device 100 canalso include second array interconnect layer 156 disposed above secondmemory stack 150 and second channel structures 152 therethrough totransfer electrical signals to and from second channel structures 152.In some embodiments, second array interconnect layer 156 includes secondbit line 158 disposed above and electrically connected to second channelstructure 152. The drain at the upper end of second channel structure152 can be electrically connected to second bit line 158 through a bitline contact. Second bit line 158 can be electrically connected toperipheral device layer 104, such as a multiplexer, through a TSV 160and the interconnects in peripheral interconnect layer 108. As a result,second channel structure 152 can be electrically connected to peripheraldevice layer 104 through second bit line 158. In some embodiments, amultiplexer in peripheral device layer 104 is configured to select oneof first channel structure(s) 122 in first memory array device structure110 and second channel structure(s) 152 in second memory array devicestructure 112. First channel structure(s) 122 in first memory arraydevice structure 110 and second channel structure(s) 152 in secondmemory array device structure 112 share the same data buffer (e.g., thebit line page buffer) and/or driver (e.g., the word line driver) inperipheral device layer 104 by the multiplexer, according to someembodiments. Additional components of second memory array devicestructure 112, such as the slit structure, TAC, and local contacts, aresubstantially similar to their counterparts in first memory array devicestructure 110 and thus, are not repeated.

As shown in FIG. 1A, 3D memory device 100 can be furthervertically-scalable by including a third memory array device structure114 stacked above second memory array device structure 112. In someembodiments, third memory array device structure 114 includes a thirdsingle-crystal silicon layer 164 disposed above second arrayinterconnect layer 156, a third memory stack 166 disposed above thirdsingle-crystal silicon layer 164, an array of third channel structures168 each extending vertically through third memory stack 166 and intothird single-crystal silicon layer 164, and a third array interconnectlayer 172 disposed above third memory stack 166 and including a thirdbit line 174. A third bonding interface 162 can be formed between secondarray interconnect layer 156 and third single-crystal silicon layer 164as a result of bonding third single-crystal silicon layer 164 ontosecond memory array device structure 112. Third single-crystal siliconlayer 164, third memory stack 166, third channel structures 168, thirdarray interconnect layer 172, and third bonding interface 162 aresubstantially similar to their counterparts in first and second memoryarray device structures 110 and 112 and thus, are not repeated.

In some embodiments, third single-crystal silicon layer 164 istransferred from the same donor substrate from which firstsingle-crystal silicon layer 118 and/or second single-crystal siliconlayer 148 are transferred to save wafer cost. It is understood thatfirst, second, and third single-crystal silicon layers 118, 148 and 164may be formed and transferred in parallel from three different donorsubstrates, respectively, to substrate 102 to further reduce fabricationcycle time in other embodiments. As a result of the de-bonding processperformed again to bond third single-crystal silicon layer 164 ontosecond memory array device structure 112, third bonding interface 162can be formed between second array interconnect layer 156 and thirdsingle-crystal silicon layer 164. In some embodiments, each thirdchannel structure 168 includes a lower plug 170, such as a SEG plug,extending into third single-crystal silicon layer 164 as part of thesource of the NAND memory string. Lower plug 170 can be epitaxiallygrown from third single-crystal silicon layer 164 at the lower end ofthird channel structure 168 and include single-crystal silicon, the samematerial as third single-crystal silicon layer 164. Third single-crystalsilicon layer 164 can thus work as the source layer of array of thirdchannel structures 168.

In some embodiments, third array interconnect layer 172 includes thirdbit line 174 disposed above and electrically connected to third channelstructure 168. The drain at the upper end of third channel structure 168can be electrically connected to third bit line 174 through a bit linecontact. Third bit line 174 can be electrically connected to peripheraldevice layer 104, such as a multiplexer, through a TSV 175 and theinterconnects in peripheral interconnect layer 108. As a result, thirdchannel structure 168 can be electrically connected to peripheral devicelayer 104 through third bit line 174. In some embodiments, a multiplexerin peripheral device layer 104 is configured to select one of firstchannel structure(s) 122, second channel structure(s) 152, and thirdchannel structure(s) 168. First channel structure(s) 122, second channelstructure(s) 152, and third channel structure(s) 168 share the same databuffer (e.g., the bit line page buffer) and/or driver (e.g., the wordline driver) in peripheral device layer 104 by the multiplexer,according to some embodiments. Additional components of third memoryarray device structure 114, such as the slit structure, TAC, and localcontacts, are substantially similar to their counterparts in first andsecond memory array device structures 110 and 112 and thus, are notrepeated.

Although peripheral device layer 104 is disposed below memory arraydevice structures 110, 112, and 114 in FIG. 1A, it is understood thatthe relative position of peripheral device layer 104 is not limited bythe example in FIG. 1A and may be any other suitable positions, such asabove memory array device structures 176, 184, and 192 in FIG. 1B. Asshown in FIG. 1B, 3D memory device 100 can include first memory arraydevice structure 176 disposed on substrate 102 without a peripheraldevice layer in-between. 3D memory device 100 can also include a secondmemory array device structure 184 disposed on first memory array devicestructure 176 with a first bonding interface 182 in-between. Asdescribed above with respect to the counterparts in FIG. 1A, secondmemory array device structure 184 can be formed by transferring asingle-crystal silicon layer from another donor substrate to substrate102 using a de-bonding process, followed by forming other components,such as the memory stack, channel structures, slit structure, TAC, localcontacts, and the array interconnect layer, above the single-crystalsilicon layer. 3D memory device 100 can further include a third memoryarray device structure 192 disposed on second memory array devicestructure 184 with a second bonding interface 191 in-between. Similarly,third memory array device structure 192 can be formed by transferringanother single-crystal silicon layer from another donor substrate tosubstrate 102 using a de-bonding process, followed by forming othercomponents above the other single-crystal silicon layer. The componentsin memory array device structures 176, 184, and 192 in FIG. 1B aresubstantially similar to their counterparts in memory array devicestructures 110, 112, and 114 and thus, are not repeated.

As shown in FIG. 1B, 3D memory device 100 includes a single-crystalsilicon layer 196 disposed above memory array device structures 176,184, and 192. In some embodiments, single-crystal silicon layer 196 istransferred from another donor substrate to substrate 102 using ade-bonding process as described herein in detail. As a result of thede-bonding process performed to bond single-crystal silicon layer 196onto third memory array device structure 192, a third bonding interface195 can be formed between third memory array device structure 192 andsingle-crystal silicon layer 196. Single-crystal silicon layer 196 caninclude single-crystal silicon, for example, can be fully made ofsingle-crystal silicon, which has superior electric performances (e.g.,higher carrier mobility) than silicon in other forms, such aspolysilicon or amorphous silicon. In some embodiments, single-crystalsilicon layer 196 includes compound materials formed from single-crystalsilicon, such as metal silicides that have silicon with metal elementsincluding, but not limited to, titanium silicide, cobalt silicide,nickel silicide, tungsten silicide, etc. In some embodiments, thethickness of single-crystal silicon layer 196 is between about 1 μm andabout 100 μm, such as between 1 μm and 100 μm (e.g., 1 μm, 2 μm, 3 μm, 4μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35μm, 40 μm, 45 μm, 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm, 85μm, 90 μm, 95 μm, 100 μm, any range bounded by the lower end by any ofthese values, or any range defined by any two of these values).

In some embodiments, 3D memory device 100 includes a peripheral devicelayer 197 on single-crystal silicon layer 196. Peripheral device layer197 can be formed “on” single-crystal silicon layer 196, in which theentirety or part of peripheral device layer 197 is formed insingle-crystal silicon layer 196 (e.g., below the top surface ofsingle-crystal silicon layer 196) and/or directly on single-crystalsilicon layer 196. Peripheral device layer 197 can include a pluralityof transistors formed on single-crystal silicon layer 196. Isolationregions (e.g., STIs) and doped regions (e.g., source regions and drainregions) of the transistors can be formed in single-crystal siliconlayer 196 as well. 3D memory device 100 can further include aninterconnect layer (also referred to herein as a “peripheralinterconnect layer” 198) above peripheral device layer 197 to transferelectrical signals to and from peripheral device layer 197. Peripheralinterconnect layer 198 can include a plurality of MEOL or BEOLinterconnects. Peripheral device layer 197 and peripheral interconnectlayer 198 in FIG. 1B are substantially slimier to their counterparts inFIG. 1A and thus, are not repeated.

In some embodiments, first memory array device structure 176 includes afirst array interconnect layer 178 including a first bit line 180disposed above and electrically connected to the channel structures offirst memory array device structure 176. First bit line 180 can beelectrically connected to peripheral device layer 197, such as amultiplexer, through a TSV and the interconnects in peripheralinterconnect layer 198. Similarly, second memory array device structure184 includes a second array interconnect layer 188 including a secondbit line 190 disposed above and electrically connected to the channelstructures of second memory array device structure 184. Second bit line190 can be electrically connected to peripheral device layer 197, suchas a multiplexer, through a TSV and the interconnects in peripheralinterconnect layer 198. Similarly, third memory array device structure192 includes a third array interconnect layer 193 including a third bitline 194 disposed above and electrically connected to the channelstructures of third memory array device structure 192. Third bit line194 can be electrically connected to peripheral device layer 197, suchas a multiplexer, through a TSV and the interconnects in peripheralinterconnect layer 198. As a result, the channel structures in first,second, third memory array device structures 176, 184, and 192 can beelectrically connected to peripheral device layer 197 through first,second, and third bit lines 180, 190, and 194, respectively. Peripheraldevice layer 197 is disposed above each of first, second, and thirdarray interconnect layers 178, 188, and 193 (and first, second, andthird bit lines 180, 190, and 194 therein), according to someembodiments.

Although not shown, it is understood that the peripheral device layer in3D memory device 100 can be immediately between two of the memory arraydevice structures, but not on the same level as any one of the memoryarray device structures. That is, the peripheral device layer can beformed on a single-crystal silicon layer dedicated to the peripheraldevice layer and not shared by a memory array device structure. It isfurther understood that the peripheral device layer in 3D memory device100 may be on the same single-crystal silicon layer (or substrate 102)shared by a memory array device structure in other embodiments. That is,the peripheral device layer can be formed on the same level as thememory array device structure and beside the memory stack of the memoryarray device structure. The level on which both the peripheral deviceand the memory stack are disposed can be the bottom level (i.e., onsubstrate 102), the top level, or any middle level of multi-stack 3Dmemory device 100.

For example, as shown in FIG. 1C, a peripheral device layer 115 and amemory stack 107 can be both disposed on a same single-crystal siliconlayer 105 (as part of a memory array device structure 103) in the middlelevel of 3D memory device 100. In some embodiments, peripheral devicelayer 115 is on single-crystal silicon layer 105 and beside memory stack107. As shown in FIG. 1C, 3D memory device 100 can further includememory array device structure 176 between substrate 102 and memory arraydevice structure 103, and another memory array device structure 114above memory array device structure 103. The details of memory arraydevice structures 114 and 176 are described above with respect to FIGS.1A and 1B and thus, are not repeated.

In some embodiments, single-crystal silicon layer 105 is transferredfrom another donor substrate to substrate 102 using a de-bonding processas described herein in detail. As a result of the de-bonding processperformed to bond single-crystal silicon layer 105 onto memory arraydevice structure 176, a first bonding interface 123 can be formedbetween memory array device structure 176 and single-crystal siliconlayer 105. Single-crystal silicon layer 105 can include single-crystalsilicon, for example, can be fully made of single-crystal silicon, whichhas superior electric performances (e.g., higher carrier mobility) thansilicon in other forms, such as polysilicon or amorphous silicon. Insome embodiments, single-crystal silicon layer 105 includes compoundmaterials formed from single-crystal silicon, such as metal silicidesthat have silicon with metal elements including, but not limited to,titanium silicide, cobalt silicide, nickel silicide, tungsten silicide,etc. In some embodiments, the thickness of single-crystal silicon layer105 is between about 1 μm and about 100 μm, such as between 1 μm and 100μm (e.g., 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm,15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 55 μm, 60 μm, 65μm, 70 μm, 75 μm, 80 μm, 85 μm, 90 μm, 95 μm, 100 μm, any range boundedby the lower end by any of these values, or any range defined by any twoof these values). In some embodiments, as the base on which both memorystack 107 and peripheral device layer 115 can form, single-crystalsilicon layer 105 extends laterally along the width greater than thewidth of memory stack 107 (e.g., in the x-direction as shown in FIG. 1C)to fit both memory stack 107 and peripheral device layer 115.

Peripheral device layer 115 can include a plurality of transistors 117formed on single-crystal silicon layer 105 beside memory stack 107.Isolation regions (e.g., STIs) and doped regions (e.g., source regionsand drain regions) of transistors 117 can be formed in single-crystalsilicon layer 105 as well. 3D memory device 100 can further include aperipheral interconnect layer to transfer electrical signals to and fromperipheral device layer 115. Peripheral device layer 115 and theperipheral interconnect layer in FIG. 1C are substantially slimier totheir counterparts in FIG. 1A and thus, are not repeated.

Memory array device structure 103 can further include an array ofchannel structures 109 each extending vertically through memory stack107 and into single-crystal silicon layer 105 (e.g., by a respective SEGplug at its lower end). Memory array device structure 103 can furtherinclude an array interconnect layer 111 including a bit line 113 abovememory stack 107 and electrically connected to channel structure 109.Bit line 113 can be electrically connected to peripheral device layer115 through a via contact 119. A second bonding interface 125 can beformed between array interconnect layer 111 of memory array devicestructure 103 and single-crystal silicon layer 164 of memory arraydevice structure 114.

FIG. 2 illustrates a cross-section of an exemplary multi-stack 3D memorydevice 200 having transferred interconnect layers, according to someembodiments of the present disclosure. In FIGS. 1A-1C, each interconnectlayer of 3D memory device 100 is formed monolithically above arespective memory stack or peripheral device layer by depositions ofinterconnects and ILD layers. It is understood that an interconnectlayer (including a bit line) may be formed non-monolithically as adedicated wafer slice and transferred from another donor substrate to 3Dmemory device 200 using the de-bonding process described herein indetail. As a result, the fabrication cycle of 3D memory device 200 canbe reduced by forming multiple interconnect layers in parallel fromdifferent donor substrates. It is understood that the details of similarstructures (e.g., materials, fabrication process, functions, etc.) inboth 3D memory devices 100 and 200 may not be repeated below.

As shown in FIG. 2, 3D memory device 200 can include a substrate 202,which can include silicon (e.g., single-crystal silicon), SiGe, GaAs,Ge, SOI, or any other suitable materials. In some embodiments, 3D memorydevice 200 is a NAND Flash memory device in which memory cells areprovided in the form of an array of NAND memory strings, for example, anarray of first channel structures 212 each extending vertically througha first memory stack 210 having a first plurality of interleavedconductor layers and dielectric layers above substrate 202. Each firstchannel structure 212 can include a composite dielectric layer (alsoknown as a “memory film” 214) and a semiconductor channel 216. In someembodiments, semiconductor channel 216 includes silicon, such asamorphous silicon, polysilicon, or single-crystal silicon.

In some embodiments, memory film 214 includes a tunneling layer, astorage layer (also known as “charge trap layer”), and a blocking layer.Memory film 214 and semiconductor channel 216 are formed along thesidewall of first channel structure 212, according to some embodiments.Each first channel structure 212 can include an upper plug 218 at itsupper end and lower plug 220 at its lower end. In some embodiments,upper plug 218 includes semiconductor materials, such as polysilicon,and works as the drain of first channel structure 212. In someembodiments, lower plug 220 extends into substrate 202, i.e., below thetop surface of substrate 202. Lower plug 220 includes semiconductormaterials, such as single-crystal silicon, and works as part of thesource of first channel structure 212, according to some embodiments.

In some embodiments, 3D memory device 200 further includes a slitstructure 222 (e.g., a GLS) that extends vertically through first memorystack 210 to substrate 202 and works as a source conductor in contactwith substrate 202 for electrically controlling an ACS of first channelstructures 212. 3D memory device 200 can further include a TAC 224extending vertically through first memory stack 210. In someembodiments, 3D memory device 200 further includes local contacts to beelectrically connected to first channel structures 212, such as bit linecontacts 228 and word line contacts 226.

As shown in FIG. 2, 3D memory device 200 can further include a firstarray interconnect layer 232 above first memory stack 210 and firstchannel structures 212. First array interconnect layer 232 can transferelectrical signals to and from first channel structures 212. First arrayinterconnect layer 232 includes a plurality of interconnects, such as afirst bit line 234, formed in one or more ILD layers, according to someembodiments. Difference from the array interconnect layer of 3D memorydevice 100 in FIGS. 1A-1C that are formed monolithically above theunderneath memory stack (e.g., by depositions of interconnects and ILDlayers), first array interconnect layer 232 of 3D memory device 100 isformed non-monolithically on a different donor substrate and transferredonto first memory stack 210 using a de-bonding process. As a result ofthe bonding, a first bonding interface 230 can be disposed between firstarray interconnect layer 232 and underneath first memory stack 210,which is different from the bonding interface of 3D memory device 100 inFIGS. 1A-1C that is disposed between the single-crystal silicon layerand the underneath array interconnect layer.

In some embodiments, 3D memory device 200 further includes a firstsingle-crystal silicon layer 236 disposed on first array interconnectlayer 232. First single-crystal silicon layer 236 can be monolithicallyformed with first array interconnect layer 232 on the same donorsubstrate and then transferred together with first array interconnectlayer 232 from the donor substrate. As a result, there is no bondinginterface between first single-crystal silicon layer 236 and underneathfirst array interconnect layer 232 in 3D memory device 200, according tosome embodiments. As described above, in some embodiments, firstsingle-crystal silicon layer 236 is disposed directly on first bit line234 in first array interconnect layer 232 without a passivation layer(e.g., an ILD layer) in-between. First single-crystal silicon layer 236can include a well between first array interconnect layer 232 and asecond memory stack 238 with any suitable dopants at a desired dopinglevel to reduce electric coupling and leakage between first arrayinterconnect layer 232 and second memory stack 238. It is understoodthat a passivation layer (not shown) may be formed between firstsingle-crystal silicon layer 236 and first bit line 234 in first arrayinterconnect layer 232 in other embodiments. For example, first bit line234 may be disposed in one or more ILD layers including a passivationlayer thereon.

First single-crystal silicon layer 236 can include single-crystalsilicon, for example, can be fully made of single-crystal silicon, whichhas superior electric performances (e.g., higher carrier mobility) thansilicon in other forms, such as polysilicon or amorphous silicon. Insome embodiments, first single-crystal silicon layer 236 includescompound materials formed from single-crystal silicon, such as metalsilicides that have silicon with metal elements including, but notlimited to, titanium silicide, cobalt silicide, nickel silicide,tungsten silicide, etc. In some embodiments, the thickness of firstsingle-crystal silicon layer 236 is between about 1 μm and about 100 μm,such as between 1 μm and 100 μm (e.g., 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6μm, 7 μm, 8 μm, 9 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm,45 μm, 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm, 85 μm, 90 μm, 95μm, 100 μm, any range bounded by the lower end by any of these values,or any range defined by any two of these values). In some embodiments,as the base on which second memory stack 238 can form, firstsingle-crystal silicon layer 236 extends laterally along at least thewidth of second memory stack 238 (e.g., in the x-direction as shown inFIG. 2). It is understood that the initial lateral dimensions of firstsingle-crystal silicon layer 236 may be determined by the lateraldimensions of the donor substrate from which first single-crystalsilicon layer 236 is transferred and may be changed after being bondedabove first memory stack 210 for example, by patterning and etchingfirst single-crystal silicon layer 236.

Similar to 3D memory device 100, 3D memory device 200 can bevertically-scalable by forming second memory stack 238 and array ofsecond channel structures 240 therethrough on first single-crystalsilicon layer 236. Second memory stack 238 includes a second pluralityof interleaved conductor layers and dielectric layers above firstsingle-crystal silicon layer 236, according to some embodiments. In someembodiments, second channel structure 240 extends vertically throughsecond memory stack 238 and includes a lower plug 242, such as a SEGplug, extending into first single-crystal silicon layer 236. Lower plug242 can be epitaxially grown from first single-crystal silicon layer 236at the lower end of second channel structure 240 and includesingle-crystal silicon, the same material as first single-crystalsilicon layer 236. First single-crystal silicon layer 236 can thus workas the source layer of array of second channel structures 240.

In some embodiments, 3D memory device 200 further includes another slitstructure 246 and another TAC 248 each extending vertically throughsecond memory stack 238 to first single-crystal silicon layer 236. Slitstructure 246 and TAC 248 are substantially similar to slit structure222 and TAC 224 and thus, are not repeated. In some embodiments, 3Dmemory device 200 further includes a second array interconnect layer 252including a second bit line 254 and a second boning interface 250between second memory stack 238 and second array interconnect layer 252.3D memory device 200 can further include a second single-crystal siliconlayer 256 on second array interconnect layer 252. Similar to first arrayinterconnect layer 232 and first single-crystal silicon layer 236,second array interconnect layer 252 and second single-crystal siliconlayer 256 can be formed monolithically on the same donor substrate andthen transferred together onto second memory stack 238 using ade-bonding process. The donor substrate on which second arrayinterconnect layer 252 and second single-crystal silicon layer 256 areformed may be the same as the donor substrate on which first arrayinterconnect layer 232 and first single-crystal silicon layer 236 areformed in order to reduce wafer cost, or may be different from the donorsubstrate on which first array interconnect layer 232 and firstsingle-crystal silicon layer 236 are formed in order to achieve parallelprocessing to shorten cycle time.

Although FIG. 2 does not show a peripheral device layer, it isunderstood that a peripheral device layer can be disposed in anysuitable position in a multi-stack 3D memory device as described abovewith respect to FIGS. 1A-1C. It is further understood that the number ofmemory stacks and array of channel structures therethrough is notlimited by the example shown in FIG. 2 since 3D memory device 200 isvertically-scalable by transferring any suitable number of arrayinterconnect layers along with single-crystal silicon layers from one ormore donor to substrate 202.

To further increase cell density by increasing the number of levels in amemory stack without sacrificing production yield, a memory stack of a3D memory device may include multiple memory decks stacked together,such that a longer NAND memory string can be achieved by connectingmultiple channel structures vertically, each of which extends verticallythrough a respective one of the multiple memory decks. A 3D memorydevice having a multi-deck architecture is referred to herein as a“multi-deck 3D memory device.” It is understood that a multi-stack 3Dmemory device (e.g., 3D memory devices 100 and 200 in FIGS. 1A-1C and 2)may be a multi-deck 3D memory device as well so long as at least one ofthe memory stacks includes more than one memory deck. FIG. 3 illustratesa cross-section of an exemplary multi-deck 3D memory device 300,according to some embodiments of the present disclosure. It isunderstood that although FIG. 3 shows a single memory stack havingmultiple memory decks in 3D memory device 300, the multi-deckarchitecture can be expanded to any number of memory stacks. It is alsounderstood that the memory stack having multiple memory decks can be atthe bottom (e.g., as shown in FIG. 3), in the middle, or at the top of amulti-stack architecture. It is further understood that the details ofsimilar structures (e.g., materials, fabrication process, functions,etc.) in both 3D memory devices 100 and 300 may not be repeated below.

As shown in FIG. 3, 3D memory device 300 can include a substrate 302,which can include silicon (e.g., single-crystal silicon), SiGe, GaAs,Ge, SOI, or any other suitable materials. In some embodiments, 3D memorydevice 300 is a NAND Flash memory device in which memory cells areprovided in the form of an array of NAND memory strings. In someembodiments, each NAND memory string includes a plurality of channelstructures in contact with one another in the vertically direction. Thechannel structures in a NAND memory string can be electrically connectedto inter-deck plugs including single-crystal silicon, which has superiorelectric performances (e.g., higher carrier mobility) than silicon inother forms, such as polysilicon or amorphous silicon. Each channelstructure of a NAND memory string can extend vertically through arespective one of a plurality of stacked memory decks (together forminga memory stack).

For example, as shown in FIG. 3, 3D memory device 300 can include afirst memory deck 304 disposed above substrate 302. First memory deck304 includes a first plurality of conductor/dielectric layer pairs,i.e., interleaved conductor layers and dielectric layers. In someembodiments, 3D memory device 300 includes an array of first channelstructures 310 each extending vertically through first memory deck 304.Each first channel structure 310 can include a composite dielectriclayer (also known as a “memory film” 312) and a semiconductor channel314. In some embodiments, semiconductor channel 314 includes silicon,such as amorphous silicon, polysilicon, or single-crystal silicon. Insome embodiments, memory film 312 includes a tunneling layer, a storagelayer (also known as “charge trap layer”), and a blocking layer. Memoryfilm 312 and semiconductor channel 314 are formed along the sidewall offirst channel structure 310, according to some embodiments. Each firstchannel structure 310 can have a cylinder shape (e.g., a pillar shape).Semiconductor channel 314, the tunneling layer, the storage layer, andthe blocking layer of memory film 312 are arranged along the radialdirection from the center toward the outer surface of the pillar in thisorder, according to some embodiments.

In some embodiments, each first channel structure 310 can include anupper plug 316 at its upper end and a lower plug 318 at its lower end.That is, semiconductor channel 314 is disposed vertically between and incontact with upper plug 316 and lower plug 318, respectively, accordingto some embodiments. In some embodiments, upper plug 316 includessemiconductor materials, such as polysilicon, and is above and incontact with semiconductor channel 314. For example, both upper plug 316and semiconductor channel 314 can include polysilicon and areelectrically connected. It is understood that first channel structure310 may not include upper plug 316 in other embodiments. In someembodiments, lower plug 318 extends into substrate 302, i.e., below thetop surface of substrate 302. Lower plug 318 includes semiconductormaterials and works as part of the source of a respective NAND memorystring (with first channel structure 310 at the bottom), according tosome embodiments. In some embodiments, lower plug 318 is a SEG plugepitaxially-grown from substrate 302 at the lower end of first channelstructure 310. As a SEG plug, lower plug 318 includes the same materialas substrate 302, e.g., single-crystal silicon, according to someembodiments.

As shown in FIG. 3, 3D memory device 300 can include a plurality offirst inter-deck plugs 320 each disposed above and in contact withrespective first channel structure 310. In some embodiments, 3D memorydevice 300 also includes dielectrics 322 that surround first inter-deckplugs 320 for electrically isolating adjacent first inter-deck plugs320. Dielectrics 322 can include, but not limited to, silicon oxide,silicon nitride, silicon oxynitride, low-k dielectrics, or anycombination thereof. In some embodiments, first inter-deck plugs 320 arepatterned in a first single-crystal silicon layer that is transferredfrom another donor substrate other than substrate 302 and bonded ontofirst memory deck 304 using a de-bonding process disclosed herein. As aresult, 3D memory device 300 can also include a first bonding interface324 between first memory deck 304 and first inter-deck plugs 320. Firstinter-deck plug 320 can include single-crystal silicon, for example, canbe fully made of single-crystal silicon, which has superior electricperformances (e.g., higher carrier mobility) than silicon in otherforms, such as polysilicon or amorphous silicon. In some embodiments,first inter-deck plug 320 includes compound materials formed fromsingle-crystal silicon, such as metal silicides that have silicon withmetal elements including, but not limited to, titanium silicide, cobaltsilicide, nickel silicide, tungsten silicide, etc. Since single-crystalsilicon has superior electric performances (e.g., higher carriermobility) compared with polysilicon, first inter-deck plugs 320including single-crystal silicon can increase cell storage capacity withbetter cell performance of 3D memory device 300, in particular, at theinter-deck joint position.

In some embodiments in which first channel structure 310 includes upperplug 316 (e.g., as shown in FIG. 3), first inter-deck plug 320 is aboveand in contact with upper plug 316 of first channel structure 310. Firstinter-deck plug 320 and upper plug 316 together may be viewed as asemiconductor plug having both single-crystal silicon (in firstinter-deck plug 320) and polysilicon (in upper plug 316). In someembodiments in which first channel structure 310 does not include upperplug 316 (not shown), first inter-deck plug 320 is above and in contactwith semiconductor channel 314 of first channel structure 310.Nevertheless, each first inter-deck plug 320 can be electricallyconnected to semiconductor channel 314 of respective first channelstructure 310. In some embodiments, the thickness of first inter-deckplug 320 is between about 1 μm and about 100 μm, such as between 1 μmand 100 μm (e.g., 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm,10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 55 μm, 60μm, 65 μm, 70 μm, 75 μm, 80 μm, 85 μm, 90 μm, 95 μm, 100 μm, any rangebounded by the lower end by any of these values, or any range defined byany two of these values). First inter-deck plugs 320 and dielectrics 322are formed in the same layer and thus, have nominally the samethickness, according to some embodiments.

As described above, 3D memory device 300 having a multi-deckarchitecture is vertically-scalable by cascading more memory decks andchannel structures on top of first memory deck 304 and first channelstructures 310 through first inter-deck plugs 320. As shown in FIG. 3,3D memory device 300 can further include a second memory deck 306including a second plurality of interleaved conductor layers anddielectric layers above first inter-deck plugs 320. In some embodiments,3D memory device 300 includes an array of second channel structures 326each extending vertically through second memory deck 306. Each secondchannel structure 326 is above and in contact with respective firstinter-deck plug 320, such that each second channel structure 326 iselectrically connected to respective first channel structure 310 throughrespective first inter-deck plug 320, according to some embodiments.That is, each second channel structure 326 can be aligned withrespective first inter-deck plug 320 and electrically connected torespective first channel structure 310. As a result, first and secondchannel structures 310 and 326 become parts of a NAND memory string withan increased number of memory cells.

Similar to first channel structures 310, each second channel structure326 can include a memory film 328 and a semiconductor channel 330. Insome embodiments, semiconductor channel 330 includes silicon, such asamorphous silicon, polysilicon, or single-crystal silicon. In someembodiments, memory film 328 includes a tunneling layer, a storage layer(also known as “charge trap layer”), and a blocking layer. Memory film328 and semiconductor channel 330 are formed along the sidewall ofsecond channel structure 326, according to some embodiments. Firstinter-deck plugs 320 and surrounding dielectrics 322 can be in the samelayer that is vertically between first and second memory decks 304 and306. In some embodiments, semiconductor channel 330 of second channelstructure 326 is above and in contact with first inter-deck plug 320,which is electrically connected to semiconductor channel 314 of firstchannel structure 310 underneath. As a result, each semiconductorchannel 330 of second channel structure 326 can be electricallyconnected to semiconductor channel 314 of respective first channelstructure 310 through respective first inter-deck plug 320 includingsingle-crystal silicon.

3D memory device 300 can further include second inter-deck plugs 334above second memory deck 306 to continuously cascade more channelstructures. Similar to first inter-deck plugs 320, second inter-deckplugs 334 can be electrically isolated by surrounding dielectrics 336and include single-crystal silicon. In some embodiments, secondinter-deck plugs 334 are patterned in a second single-crystal siliconlayer that is transferred from another donor substrate and bonded ontosecond memory deck 306 using a de-bonding process disclosed herein. Thedonor substrate from which the second single-crystal silicon layer istransferred can be the same as the donor substrate from which the firstsingle-crystal silicon layer is transferred in order to save wafer cost.The donor substrate from which the second single-crystal silicon layeris transferred can be different from the donor substrate from which thefirst single-crystal silicon layer is transferred in order to allowparallel processing to shorten cycle time. Nevertheless, as a result, 3Dmemory device 300 can also include a second bonding interface 338between second memory deck 306 and second inter-deck plugs 334.

Similar to first channel structure 310, second channel structure 326 caninclude an upper plug 332 including polysilicon at an upper end thereofand in contact with semiconductor channel 330 of second channelstructure 326 (e.g., as shown in FIG. 3). Each second inter-deck plug334 thus can be above and in contact with upper plug 332 of respectivesecond channel structure 326 to form electrical connections. In someembodiments, second inter-deck plug 334 and upper plug 332 together maybe viewed as a semiconductor plug having both single-crystal silicon (insecond inter-deck plug 334) and polysilicon (in upper plug 332). It isunderstood that second channel structure 326 may not include upper plug332 in other embodiments, such that each second inter-deck plug 334 isabove and in contact directly with semiconductor channel 330 ofrespective second channel structure 326 to form electrical connections.

3D memory device 300 can further include a third memory deck 308including a third plurality of interleaved conductor layers anddielectric layers above second inter-deck plugs 334. In someembodiments, 3D memory device 300 includes an array of third channelstructures 340 each extending vertically through third memory deck 308.Similar to second channel structures 326, each third channel structure340 can include a memory film 342 and a semiconductor channel 344 alongthe sidewall of third channel structure 340 as well as an upper plug 346at the upper end thereof. Each upper plug 346 can work as the source ofa respective NAND memory string as it is at the upper end of thirdchannel structure 340 above first and second channel structures 310 and326. Each third channel structure 340 is above and in contact withrespective second inter-deck plug 334, such that each third channelstructure 340 is electrically connected to respective first and secondchannel structures 310 and 326 through respective first and secondinter-deck plug 320 and 334, according to some embodiments. That is,each third channel structure 340 can be aligned with respective secondinter-deck plug 334 and electrically connected to respective first andsecond channel structures 310 and 326. As a result, first, second, andthird channel structures 310, 326, and 340 together form a NAND memorystring with an increased number of memory cells.

In some embodiments, 3D memory device 300 further includes a slitstructure 348 (e.g., a GLS) that extends vertically through first,second, and third memory decks 304, 306, and 308 to substrate 302. Slitstructure 348 can be used to form the conductor/dielectric layer pairsin first, second, and third memory decks 304, 306, and 308 by a gatereplacement process. In some embodiments, slit structure 348 is firstlyfilled with dielectric materials, for example, silicon oxide, siliconnitride, or any combination thereof, for separating array of the NANDmemory strings into different regions (e.g., memory fingers and/ormemory blocks). Then, slit structure 348 can be filled with conductiveand/or semiconductor materials, for example, W, Co, polysilicon, or anycombination thereof as a source conductor in contact with substrate 302for electrically controlling an ACS.

In some embodiments, 3D memory device 300 further includes a TAC 350extending vertically through first, second, and third memory decks 304,306, and 308 to substrate 302. TAC 350 can carry electrical signals fromand/or to first, second, and third memory decks 304, 306, and 308, suchas part of the power bus, with shortened interconnect routing. TAC 350can also provide mechanical support to first, second, and third memorydecks 304, 306, and 308. In some embodiments, TAC 350 is filled withconductive materials, including, but not limited to, W, Co, Cu, Al,doped silicon, silicides, or any combination thereof.

In some embodiments, first, second, and third memory decks 304, 306, and308 each includes a staircase structure at one side thereof in thelateral direction to fan-out the word lines. 3D memory device 300further includes an array interconnect layer 356 and local contacts,such as bit line contacts 352 and word line contacts 354, toelectrically connect first, second, and third channel structures 310,326, and 340 to array interconnect layer 356, according to someembodiments. Array interconnect layer 356 can be disposed above first,second, and third memory decks 304, 306, and 308 to transfer electricalsignals to and from first, second, and third channel structures 310,326, and 340. In some embodiments, array interconnect layer 356 includesa bit line 358 disposed above and electrically connected to first,second, and third channel structures 310, 326, and 340. The drain at theupper end of third channel structure 340, e.g., upper plug 346, can beelectrically connected to bit line 358 through bit line contact 352. Bitline 358 can be electrically connected to a peripheral device layer (notshown) through a TSV 360. Although the peripheral device layer is notshown in FIG. 3, it is understood that a peripheral device layer can bedisposed in any suitable position in 3D memory device 300 as describedabove with respect to FIGS. 1A-1C. Array interconnect layer 356 and bitline 358 therein can be formed monolithically above third memory deck308 without a bonding interface therebetween (e.g., as shown in FIG. 3).It is understood that array interconnect layer 356 and bit line 358therein may be formed non-monolithically on a different donor substrateand then transferred onto third memory deck 308 using a de-bondingprocess as described above with respect to FIG. 2.

FIGS. 4A-4J illustrate an exemplary fabrication process for forming amulti-deck 3D memory device, according to some embodiments of thepresent disclosure. FIG. 7 is a flowchart of an exemplary method 700 forforming a multi-deck 3D memory device, according to some embodiments ofthe present disclosure. Examples of the 3D memory device depicted inFIGS. 4A-4J and 7 include 3D memory device 300 depicted in FIG. 3. FIGS.4A-4J and 7 will be described together. It is understood that theoperations shown in method 700 are not exhaustive and that otheroperations can be performed as well before, after, or between any of theillustrated operations. Further, some of the operations may be performedsimultaneously, or in a different order than shown in FIG. 7.

Referring to FIG. 7, method 700 starts at operation 702, in which afirst dielectric deck is formed above a first substrate. The firstdielectric deck can include a first plurality of interleaved sacrificiallayers and dielectric layers. The first substrate can be a siliconsubstrate. As illustrated in FIG. 4A, a first dielectric deck 404 isformed above a first silicon substrate 402. In some embodiments, aninsulation layer (not shown) is formed between first silicon substrate402 and first dielectric deck 404. To form first dielectric deck 404,first dielectric layers (known as a “sacrificial layer” 406) and seconddielectric layers 408 that are different from sacrificial layer 406 canbe alternatively deposited above first silicon substrate 402 using oneor more thin film deposition processes including, but not limited to,chemical vapor deposition (CVD), physical vapor deposition (PVD), atomiclayer deposition (ALD), any other suitable processes, or any combinationthereof. In some embodiments, each sacrificial layer 406 includessilicon nitride, and each dielectric layer 408 includes silicon oxide.

Method 700 proceeds to operation 704, as illustrated in FIG. 7, in whicha first channel structure extending vertically through the firstdielectric deck is formed. To form the first channel structure, a firstchannel hole is etched through the first dielectric deck, and a firstmemory film and a first semiconductor channel are subsequently depositedalong a sidewall of the first channel hole, according to someembodiments. In some embodiments, an upper plug including polysilicon isfurther formed at an upper end of the first channel hole.

As illustrated in FIG. 4B, first channel structures 410 each extendingvertically through first dielectric deck 404 are formed above firstsilicon substrate 402. For each first channel structure 410, a firstchannel hole (not shown) is first etched through interleaved sacrificiallayers 406 and dielectric layers 408 of first dielectric deck 404 usingone or more dry etch processes and/or wet etch processes, such as deepreactive-ion etch (RIE), according to some embodiments. The firstchannel hole can be continuously etched into the upper portion of firstsilicon substrate 402. In some embodiments, a lower plug 418, e.g., aSEG plug, of first channel structure 410 is formed using epitaxialgrowth processes from first silicon substrate 402 to fill the lowerportion of the first channel hole. The fabrication processes forepitaxially growing lower plug 418 can include, but not limited to,vapor-phase epitaxy (VPE), liquid-phase epitaxy (LPE), molecular-beamepitaxy (MBE), or any combinations thereof.

As illustrated in FIG. 4B, after forming lower plug 418, a memory film412 and a semiconductor channel 414 can be subsequently deposited alongthe sidewall of the first channel hole. In some embodiments, a blockinglayer, a storage layer, and a tunneling layer are subsequently depositedin this order using one or more thin film deposition processes, such asALD, CVD, PVD, any other suitable processes, or any combination thereof,to form memory film 412. Semiconductor channel 414 can then be depositedon the tunneling layer using one or more thin film deposition processes,such as ALD, CVD, PVD, any other suitable processes, or any combinationthereof. In some embodiments, memory film 412 and semiconductor channel414 are deposited on lower plug 418 at the bottom of the first channelas well, and semiconductor channel 414 is in contact with lower plug 418using a SONO punch process. In some embodiments, a capping layer isfilled in the remaining space of the first channel hole by depositingdielectric materials such as silicon oxide after the deposition ofsemiconductor channel 414.

As illustrated in FIG. 4B, after forming memory film 412 andsemiconductor channel 414, an upper plug 416 is formed at the upper endof the first channel hole. In some embodiments, parts of memory film 412and semiconductor channel 414 at the upper end of the first channel holecan be removed by chemical mechanical polishing (CMP), grinding, wetetching, and/or dry etching to form a recess at the upper end of thefirst channel hole. Upper plug 416 then can be formed by depositingsemiconductor materials, such as polysilicon, into the recess by one ormore thin film deposition processes, such as CVD, PVD, ALD,electroplating, electroless plating, or any combination thereof. Firstchannel structure 410 is thereby formed. It is understood that firstchannel structure 410 may not include upper plug 416 in otherembodiments, and the process for forming upper plug 416 can be skipped.

Method 700 proceeds to operation 706, as illustrated in FIG. 7, in whicha first single-crystal silicon layer is transferred from a secondsubstrate (a “donor substrate”) onto the first dielectric deck above thefirst substrate, for example, using a de-bonding process. The secondsubstrate is a silicon substrate. FIG. 8 is a flowchart of an exemplarymethod 800 for transferring a single-crystal silicon layer, according tosome embodiments of the present disclosure. Referring to FIG. 8, method800 starts at operation 802, in which a dopant is implanted into thesecond substrate to form a heterogeneous interface in the secondsubstrate.

As illustrated in FIG. 4C, an ion implantation process is performed intoa second silicon substrate 420 to form a heterogeneous interface 424 insecond silicon substrate 420, which separates a doped firstsingle-crystal silicon layer 422 from the remainder of second siliconsubstrate 420. In some embodiments, the dopant is hydrogen, includinghydrogen ions and/or hydrogen atoms, most of which can be diffused outfrom first single-crystal silicon layer 422 during later thermalprocesses. It is understood that any other suitable dopants that canform heterogeneous interface 424 in second silicon substrate 420 may beused as well. For example, light-ion implantation may be used to implantlight ions, such as protons or helium ions, into first single-crystalsilicon layer 422, which can be later removed from first single-crystalsilicon layer 422. The thickness of first single-crystal silicon layer422, i.e., the distance between heterogeneous interface 424 and thefront side of second silicon substrate 420 in the y-direction can becontrolled by various parameters of the ion implantation, such asenergy, dopant, dose, time, etc., as well as parameters ofpost-annealing, such as temperature and time of thermal diffusionfollowing the ion implantation. In some embodiments, the thickness offirst single-crystal silicon layer 422 is between about 1 μm and about100 μm, such as between 1 μm and 100 μm (e.g., 1 μm, 2 μm, 3 μm, 4 μm, 5μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40μm, 45 μm, 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm, 85 μm, 90μm, 95 μm, 100 μm, any range bounded by the lower end by any of thesevalues, or any range defined by any two of these values). Thicknessuniformity can be controlled by fine-tuning control of the implanteddopants over the entire surface of second silicon substrate 420.

Heterogeneous interface 424 is an interface in second silicon substrate420 between two layers with different materials, such ashydrogen-implanted single-crystal silicon and undoped single-crystalsilicon as shown in FIG. 4C. The existence of heterogeneous interface424 in second silicon substrate 420 can facilitate the separation of thetwo material layers, such as first single-crystal silicon layer 422 andthe remainder of second silicon substrate 420, later in the de-bondingprocess. It is understood that heterogeneous interface 424 may be formedwithout ion implantation, for example, may be an existing interfacebetween different material layers, such as in a SOI substrate.

Method 800 proceeds to operation 804, as illustrated in FIG. 8, in whichthe second substrate and the first substrate are bonded in aface-to-face manner. In some embodiments, the bonding includessilicon-dielectric bonding, which has a relatively high bonding strengthand yield. As illustrated in FIG. 4D, second silicon substrate 420 isflipped upside down, such that first single-crystal silicon layer 422faces down toward the front side of first silicon substrate 402. Firstsingle-crystal silicon layer 422 of second silicon substrate 420 andfirst dielectric deck 404 of first silicon substrate 402 then can bebonded in a face-to-face manner to form silicon-oxygen bonds in a firstbonding interface 426 between first single-crystal silicon layer 422 andfirst dielectric deck 404.

Method 800 proceeds to operation 806, as illustrated in FIG. 8, in whichthe single-crystal silicon layer is split from the second substratealong the heterogeneous interface in the second substrate to leave thesingle-crystal silicon layer. The single-crystal silicon layer remainsbonded on the first dielectric deck, according to some embodiments. Asillustrated in FIG. 4E, first single-crystal silicon layer 422 is splitfrom second silicon substrate 420 along heterogeneous interface 424 byapplying a mechanical force on second silicon substrate 420, forexample, because the bonding strength at first bonding interface 426 isgreater than the breaking force at heterogeneous interface 424. In otherwords, first single-crystal silicon layer 422 can be broken and peeledoff from second silicon substrate 420 along heterogeneous interface 424.As a result, first single-crystal silicon layer 422 can be transferredfrom its donor substrate—second silicon substrate 420 to first siliconsubstrate 402 using the de-bonding process described above with respectto FIGS. 4C-4E and 8.

Referring back to FIG. 7, method 700 proceeds to operation 708 in whicha first inter-deck plug is patterned in the first single-crystal siliconlayer, such that the first inter-deck plug is above and in contact withthe first channel structure. To pattern the first inter-deck plug, adielectric surrounding the first inter-deck plug is deposited.

As illustrated in FIG. 4F, a plurality of first inter-deck plugs 428 arepatterned in first single-crystal silicon layer 422 above firstdielectric deck 404. Each first inter-deck plug 428 can be aligned withrespective first channel structure 410 to be above and in contact withrespective first channel structure 410. In some embodiments, firstsingle-crystal silicon layer 422 is patterned using photolithography,development, and etching processes, leaving patterned first inter-deckplugs 428 aligned with underneath first channel structures 410.Dielectrics 430 then can be deposited to fill the openings between firstinter-deck plugs 428 using one or more thin film deposition processes,such as CVD, PVD, ALD, electroplating, electroless plating, or anycombination thereof, followed by a dielectric CMP process to planarizethe top surface. As a result, first inter-deck plugs 428 can be formedabove first dielectric deck 404, surrounding and electrically isolatedby dielectrics 430 in the same layer. The thickness of first inter-deckplugs 428 and dielectrics 430 can be nominally the same as the thicknessof first single-crystal silicon layer 422. In some embodiments in whichfirst channel structure 410 includes upper plug 416, first inter-deckplug 428 is formed above and in contact with upper plug 416 ofrespective first channel structure (e.g., as shown in FIG. 4F). In someembodiments in which first channel structure 410 does not include upperplug 416, first inter-deck plug 428 is formed above and in contact withsemiconductor channel 414 of respective first channel structure 410.

Method 700 proceeds to operation 710, as illustrated in FIG. 7, in whicha second dielectric deck is formed above the first inter-deck plug. Thesecond dielectric deck can include a second plurality of interleavedsacrificial layers and dielectric layers. As illustrated in FIG. 4G, asecond dielectric deck 432 is formed above first inter-deck plugs 428.To form first dielectric deck 404, sacrificial layer 434 and dielectriclayers 436 can be alternatively deposited above first inter-deck plugs428 using one or more thin film deposition processes including, but notlimited to, CVD, PVD, ALD, any other suitable processes, or anycombination thereof. In some embodiments, each sacrificial layer 434includes silicon nitride, and each dielectric layer 436 includes siliconoxide.

Method 700 proceeds to operation 712, as illustrated in FIG. 7, in whicha second channel structure extending vertically through the seconddielectric deck is formed, such that the second channel structure isabove and in contact with the first inter-deck plug. To form the secondchannel structure, a second channel hole is etched through the seconddielectric deck, and a second memory film and a second semiconductorchannel are subsequently deposited along a sidewall of the secondchannel hole, according to some embodiments. In some embodiments, anupper plug including polysilicon is further formed at an upper end ofthe second channel hole.

As illustrated in FIG. 4H, second channel structures 438 each extendingvertically through second dielectric deck 432 are formed above firstinter-deck plugs 428. For each second channel structure 438, a secondchannel hole (not shown) is first etched through second dielectric deck432 using one or more dry etch processes and/or wet etch processes, suchas DRIE, according to some embodiments. Each second channel hole ispatterned to be aligned with respective first inter-deck plug 428, suchthat resulting second channel structure 438 is electrically connected torespective first inter-deck plug 428 and first channel structure 410. Amemory film 440 and a semiconductor channel 442 then can be subsequentlydeposited along the sidewall of the second channel hole using one ormore thin film deposition processes, such as ALD, CVD, PVD, any othersuitable processes, or any combination thereof. As a result,semiconductor channel 442 of second channel structure 438 can be formedabove and in contact with first inter-deck plug 428.

As illustrated in FIG. 4H, after forming memory film 440 andsemiconductor channel 442, an upper plug 444 is formed at the upper endof the second channel structure. In some embodiments, parts of memoryfilm 440 and semiconductor channel 442 at the upper end of the secondchannel hole can be removed by CMP, grinding, wet etching, and/or dryetching to form a recess at the upper end of the second channel hole.Upper plug 444 then can be formed by depositing semiconductor materials,such as polysilicon, into the recess by one or more thin film depositionprocesses, such as CVD, PVD, ALD, electroplating, electroless plating,or any combination thereof. Second channel structure 438 is therebyformed.

Method 700 proceeds to operation 714, as illustrated in FIG. 7, in whicha first memory deck and a second memory deck each including interleavedconductor layers and the dielectric layers are formed by gatereplacement, i.e., replacing the sacrificial layers in the firstdielectric deck and the second dielectric deck with the conductorlayers. To form the first and second memory decks, a slit openingextending vertically through the first and second dielectric decks isetched, the sacrificial layers in the first dielectric deck and thesecond dielectric deck are replaced with the conductor layers throughthe slit opening, and a spacer and a conductor layer are subsequentlydeposited into the slit opening. It is understood that the fabricationprocess for forming a multi-deck 3D memory device isvertically-scalable. Thus, more dielectric decks, channel structures,and inter-deck plugs may be formed using substantially similar processesdescribed above prior to the gate-replacement process for forming thememory decks.

As illustrated in FIG. 4I, a slit opening (not shown) is formedextending vertically through both first and second dielectric decks 404and 432 as well as dielectrics 430 surrounding first inter-deck plug 428(as shown in FIG. 4H). The slit opening can be patterned and etched bywet etch and/or dry etch process, such as DRIE. Each sacrificial layer406 (as shown in FIG. 4A) of first dielectric deck 404 and eachsacrificial layer 434 (as shown in FIG. 4G) of second dielectric deck432 then can be etched through the slit opening, and conductor layers449 can be deposited to fill the recesses left by sacrificial layers 406and 434 through the slit opening. That is, each sacrificial layer 406 offirst dielectric deck 404 and each sacrificial layer 434 of seconddielectric deck 432 can be replaced by conductor layer 449, therebyforming a first memory deck 448 including interleaved conductor layers449 and dielectric layers 408 and a second memory deck 450 includinginterleaved conductor layers 449 and dielectric layers 436,respectively. The replacement of sacrificial layers 406 and 434 withconductor layers 449 can be performed by wet etch and/or dry etch ofsacrificial layers 406 and 434 selective to dielectric layers 408 and436 and filling the remaining recesses with conductor layers 449 usingone or more thin film deposition processes, such as CVD, PVD, ALD, orany combination thereof.

As illustrated in FIG. 4I, after the gate-replacement process, a spacer(e.g., including one or more dielectric layers, such as silicon oxidelayer or silicon nitride layer, not shown) and a conductor layer (suchas a tungsten layer) are subsequently deposited into the slit openingusing one or more thin film deposition processes, such as CVD, PVD, ALD,or any combination thereof, to form a slit structure 446, which extendsvertically through first and second memory decks 448 and 450 and intofirst silicon substrate 402. In some embodiments, a doped region isformed by ion implantation and/or thermal diffusion in first siliconsubstrate 402 through the slit opening prior to depositing the spacerand conductor layer into the slit opening.

Method 700 proceeds to operation 716, as illustrated in FIG. 7, in whichan interconnect layer is formed above the second memory deck. In someembodiments, a TAC extending vertically through the first memory deckand the second memory deck is formed and electrically connected to theinterconnect layer. As illustrated in FIG. 4I, a TAC 452 extendingvertically through first and second memory decks 448 and 450 to firstsilicon substrate 402 is formed by wet etch and/or dry etch process,such as DRIE, followed by one or more thin film deposition processes,such as CVD, PVD, ALD, or any combination thereof. As illustrated inFIG. 4J, an array interconnect layer 454 is formed above second memorydeck 450 and electrically connected to TAC 452. Array interconnect layer454 can include interconnects, such as bit lines, formed in one or moreILD layers and electrically connected to first and second channelstructures 410 and 438 as well as slit structure 446. In someembodiments, array interconnect layer 454 is formed monolithically onsecond memory deck 450 using one or more thin film deposition processes,such as CVD, PVD, ALD, electroplating, electroless plating, or anycombination thereof. The interconnects in array interconnect layer 454can be patterned using photolithography, dry etch and/or wet etch, andCMP processes. In some embodiments, array interconnect layer 454 isformed non-monolithically on a donor substrate and then transferred ontosecond memory deck 450 above first silicon substrate 402 using ade-bonding process described herein, for example, as described abovewith respect to FIG. 8.

FIGS. 5A-5J illustrate an exemplary fabrication process for forming amulti-stack 3D memory device having transferred interconnect layers,according to some embodiments of the present disclosure. FIG. 9 is aflowchart of an exemplary method 900 for forming a multi-stack 3D memorydevice having transferred interconnect layers, according to someembodiments of the present disclosure. Examples of the 3D memory devicedepicted in FIGS. 5A-5J and 9 include 3D memory device 200 depicted inFIG. 2. FIGS. 5A-5J and 9 will be described together. It is understoodthat the operations shown in method 900 are not exhaustive and thatother operations can be performed as well before, after, or between anyof the illustrated operations. Further, some of the operations may beperformed simultaneously, or in a different order than shown in FIG. 9.

Referring to FIG. 9, method 900 starts at operation 902, in which asemiconductor device is formed on a first substrate. In someembodiments, the semiconductor device includes a peripheral devicelayer. In some embodiments, the semiconductor device includes a channelstructure extending vertically through a memory stack. An interconnectlayer is formed above the semiconductor device on the first substrate,according to some embodiments. The substrate can be a silicon substrate.

As illustrated in FIG. 5A, a peripheral device layer 504 is formed on afirst silicon substrate 502. Peripheral device layer 504 can include aplurality of transistors 506 formed on first silicon substrate 502.Transistors 506 can be formed by a plurality of processes including, butnot limited to, photolithography, dry and/or wet etching, thin filmdeposition, thermal growth, implantation, CMP, and any other suitableprocesses. In some embodiments, doped regions are formed in firstsilicon substrate 502 by ion implantation and/or thermal diffusion,which function, for example, as source regions and/or drain regions oftransistors 506. In some embodiments, isolation regions (e.g., STIs) arealso formed in first silicon substrate 502 by dry and/or wet etching andthin film deposition. Transistors 506 in peripheral device layer 504 canform a variety types of circuits, such as a multiplexer, a data buffer,and a driver.

As illustrated in FIG. 5A, a peripheral interconnect layer 508 is formedabove peripheral device layer 504 on first silicon substrate 502.Peripheral interconnect layer 508 can include one or more ILD layers andinterconnects therein formed using multiple processes. For example, theinterconnects can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof.

Method 900 proceeds to operation 904, as illustrated in FIG. 9, in whicha first single-crystal silicon layer is transferred from a secondsubstrate (a “donor substrate”) onto the first semiconductor device onthe first substrate. In some embodiments, to transfer the firstsingle-crystal silicon layer, a heterogeneous interface is formed in thesecond substrate, for example, by implanting a dopant, such as hydrogen,into the second substrate. In some embodiments, to transfer the firstsingle-crystal silicon layer, the second substrate and the firstsubstrate are bonded in a face-to-face manner. In some embodiments, totransfer the first single-crystal silicon layer, the firstsingle-crystal silicon layer is split from the second substrate alongthe heterogeneous interface in the second substrate to leave the firstsingle-crystal silicon layer.

As illustrated in FIG. 5B, an ion implantation process is performed intoa second silicon substrate 510 to form a heterogeneous interface 513 insecond silicon substrate 510, which separates a doped firstsingle-crystal silicon layer 512 from the remainder of second siliconsubstrate 510. In some embodiments, the dopant is hydrogen, includinghydrogen ions and/or hydrogen atoms, most of which can be diffused outfrom first single-crystal silicon layer 512 during later thermalprocesses. It is understood that any other suitable dopants that canform heterogeneous interface 513 in second silicon substrate 510 may beused as well. For example, light-ion implantation may be used to implantlight ions, such as protons or helium ions, into first single-crystalsilicon layer 512 which can be later removed from first single-crystalsilicon layer 512. The thickness of first single-crystal silicon layer512, i.e., the distance between heterogeneous interface 513 and thefront side of second silicon substrate 510 in the y-direction can becontrolled by various parameters of the ion implantation, such asenergy, dopant, dose, time, etc., as well as parameters ofpost-annealing, such as temperature and time of thermal diffusionfollowing the ion implantation. In some embodiments, the thickness offirst single-crystal silicon layer 512 is between about 1 μm and about100 μm, such as between 1 μm and 100 μm (e.g., 1 μm, 2 μm, 3 μm, 4 μm, 5μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40μm, 45 μm, 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm, 85 μm, 90μm, 95 μm, 100 μm, any range bounded by the lower end by any of thesevalues, or any range defined by any two of these values). Thicknessuniformity can be controlled by fine-tuning control of the implanteddopants over the entire surface of second silicon substrate 510.

Second silicon substrate 510 can be flipped upside down, such that firstsingle-crystal silicon layer 512 faces down toward the front side offirst silicon substrate 502. First single-crystal silicon layer 512 ofsecond silicon substrate 510 and peripheral interconnect layer 508 offirst silicon substrate 502 then can be bonded in a face-to-face mannerto form silicon-oxygen bonds in a first bonding interface 511 betweenfirst single-crystal silicon layer 512 and peripheral interconnect layer508. As illustrated in FIG. 5C, first single-crystal silicon layer 512is split from second silicon substrate 510 along heterogeneous interface513 by applying a mechanical force on second silicon substrate 510, forexample, because the bonding strength at first bonding interface 511 isgreater than the breaking force at heterogeneous interface 513. In otherwords, first single-crystal silicon layer 512 can be broken and peeledoff from second silicon substrate 510 along heterogeneous interface 513.As a result, first single-crystal silicon layer 512 can be transferredfrom its donor substrate—second silicon substrate 510 to first siliconsubstrate 502 using the de-bonding process.

Method 900 proceeds to operation 906, as illustrated in FIG. 9, in whicha first channel structure extending vertically through a first memorystack above the first single-crystal silicon layer is formed. The firstmemory stack can include interleaved conductor layers and dielectriclayers. The first channel structure includes a lower plug extending intothe first single-crystal silicon layer and including single-crystalsilicon, according to some embodiments. In some embodiments, to form thefirst memory stack, a first dielectric stack including interleavedsacrificial layers and dielectric layers is formed on the firstsingle-crystal silicon layer, and the first memory stack is formed byreplacing the sacrificial layers in the dielectric stack with theconductor layers. For example, a slit opening extending verticallythrough the first dielectric stack may be etched, the sacrificial layersin the first dielectric stack may be replaced with the conductor layersthrough the slit opening, and a spacer and a conductor layer may besubsequently deposited into the slit opening. In some embodiments, toform the first channel structure, a first channel hole is etched throughthe first dielectric stack and into the first single-crystal siliconlayer, the lower plug is epitaxially grown into a bottom portion of thefirst channel hole from the first single-crystal silicon layer, and amemory film and a semiconductor channel are subsequently deposited alonga sidewall of the first channel hole and above the lower plug.

As illustrated in FIG. 5D, a first memory stack 514 includinginterleaved conductor layers and dielectric layers is formed on firstsingle-crystal silicon layer 512. In some embodiments, a dielectricstack (not shown) including interleaved sacrificial layers anddielectric layers is first formed on first single-crystal silicon layer512 by alternatingly depositing two different dielectric layers (e.g.,silicon nitride and silicon oxide) using one or more thin filmdeposition processes including, but not limited to, CVD, PVD, ALD, orany combination thereof. Channel holes (not shown) then can be etchedthrough the dielectric stack and into first single-crystal silicon layer512 using wet etch and/or dry etch processes, such as DRIE. In someembodiments, lower plugs 524, e.g., SEG plugs, are epitaxially growninto the bottom portion of each channel hole from first single-crystalsilicon layer 512 using, for example, VPE, LPE, MBE, or any combinationsthereof. Lower plugs 524 thus can include the same material as firstsingle-crystal silicon layer 512, i.e., single-crystal silicon.

After forming lower plug 524, a memory film 518 and a semiconductorchannel 520 can be subsequently deposited along the sidewall of eachchannel hole above lower plug 524. In some embodiments, a blockinglayer, a storage layer, and a tunneling layer are subsequently depositedin this order using one or more thin film deposition processes, such asALD, CVD, PVD, any other suitable processes, or any combination thereof,to form memory film 518. Semiconductor channel 520 can then be depositedon the tunneling layer using one or more thin film deposition processes,such as ALD, CVD, PVD, any other suitable processes, or any combinationthereof. After forming memory film 518 and semiconductor channel 520, anupper plug 522 can be formed at the upper end of each channel hole. Insome embodiments, parts of memory film 518 and semiconductor channel 520at the upper end of the channel hole are removed by to form a recess.Upper plug 522 then can be formed by depositing semiconductor materials,such as polysilicon, into the recess by one or more thin film depositionprocesses, such as CVD, PVD, ALD, electroplating, electroless plating,or any combination thereof. First channel structure 516 is therebyformed.

As illustrated in FIG. 5D, a slit opening (not shown) is formedextending vertically through the dielectric stack. The slit opening canbe patterned and etched by wet etch and/or dry etch process, such asDRIE. Each sacrificial layer of the dielectric stack then can be etchedthrough the slit opening, and the conductor layers can be deposited tofill the recesses left by the sacrificial layers through the slitopening. That is, each sacrificial layer of the dielectric stack can bereplaced by a conductor layer, thereby forming first memory stack 514.The replacement of the sacrificial layers with the conductor layers canbe performed by wet etch and/or dry etch of the sacrificial layersselective to the dielectric layers and filling the remaining recesseswith the conductor layers using one or more thin film depositionprocesses, such as CVD, PVD, ALD, or any combination thereof. In someembodiments, after the gate-replacement process, a spacer (e.g.,including one or more dielectric layers, such as silicon oxide layer orsilicon nitride layer, not shown) and a conductor layer (such as atungsten layer) are subsequently deposited into the slit opening usingone or more thin film deposition processes, such as CVD, PVD, ALD, orany combination thereof, to form a slit structure 526, which extendsvertically through first memory stack 514 and into first single-crystalsilicon layer 512.

As illustrated in FIG. 5D, in some embodiments, a TAC 528 extendingvertically through first memory stack 514 and first single-crystalsilicon layer 512 is formed by wet etch and/or dry etch process, such asDRIE, followed by one or more thin film deposition processes, such asCVD, PVD, ALD, or any combination thereof, according to someembodiments. As a result, TAC 528 can be in contact with theinterconnects in peripheral interconnect layer 508.

Method 900 proceeds to operation 908, as illustrated in FIG. 9, in whicha second single-crystal silicon layer is formed in the second substrate.The second substrate is the same donor substrate from which the firstsingle-crystal silicon layer is transferred, according to someembodiments. It is understood that a different donor substrate may beused for forming the second single-crystal silicon layer in otherembodiments. In some embodiments, to form the second single-crystalsilicon layer, a heterogeneous interface is formed in the secondsubstrate, for example, by implanting a dopant into the secondsubstrate. As illustrated in FIG. 5E, an ion implantation process isperformed again into second silicon substrate 510 to form aheterogeneous interface 533 in second silicon substrate 510, whichseparates a doped second single-crystal silicon layer 532 from theremainder of second silicon substrate 510. The fabrication processes forforming second single-crystal silicon layer 532 is substantially similarto those for forming first single-crystal silicon layer 512 as describedabove with respect to FIG. 5B and thus, are not repeated.

Method 900 proceeds to operation 910, as illustrated in FIG. 9, in whichan interconnect layer is formed on the second single-crystal siliconlayer. The interconnect layer can include a bit line. As illustrated inFIG. 5F, an array interconnect layer 534 is formed on secondsingle-crystal silicon layer 532. Array interconnect layer 534 caninclude one or more ILD layers and interconnects therein, including abit line 536, formed using multiple processes. For example, theinterconnects can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. In some embodiments, bit line 536 isformed directly on second single-crystal silicon layer 532 without anypassivation layer (e.g., an ILD layer including dielectrics such assilicon oxide) in-between, as shown in FIG. 5F. In some embodiments, apassivation layer (not shown) is formed on second single-crystal siliconlayer 532, and bit line 536 is formed on the passivation layer.

Method 900 proceeds to operation 912, as illustrated in FIG. 9, in whichthe second single-crystal silicon layer and the interconnect layerformed thereon are transferred from the second substrate onto the firstmemory stack above the first substrate, such that the bit line iselectrically connected to the first channel structure, and the secondsingle-crystal silicon layer becomes above the interconnect layer. Insome embodiments, to transfer the second single-crystal silicon layerand the interconnect layer formed thereon, the second single-crystalsilicon layer and the interconnect layer formed thereon are split fromthe second substrate along the heterogeneous interface in the secondsubstrate, and the second single-crystal silicon layer and theinterconnect layer formed thereon and the first substrate are bonded ina face-to-face manner. The bonding can include hybrid bonding.

As illustrated in FIG. 5G, second single-crystal silicon layer 532 andarray interconnect layer 534 formed thereon are split from secondsilicon substrate 510 along heterogeneous interface 533 by applying amechanical force on second silicon substrate 510. In other words, secondsingle-crystal silicon layer 532 and array interconnect layer 534 formedthereon can be broken and peeled off from second silicon substrate 510along heterogeneous interface 533. As illustrated in FIG. 5H, secondsingle-crystal silicon layer 532 and array interconnect layer 534 formedthereon can be flipped upside down, such that array interconnect layer534 faces down toward the front side of first silicon substrate 502,i.e., the top surface of first memory stack 514. Second single-crystalsilicon layer 532 and array interconnect layer 534 formed thereon andfirst memory stack 514 of first silicon substrate 502 then can be bondedin a face-to-face manner using hybrid bonding, resulting in a secondbonding interface 538 between first memory stack 514 and arrayinterconnect layer 534. Hybrid bonding (also known as “metal/dielectrichybrid bonding”) is a direct bonding technology (e.g., forming bondingbetween surfaces without using intermediate layers, such as solder oradhesives) and can obtain metal-metal bonding and dielectric-dielectricbonding simultaneously. In some embodiments, a treatment process, e.g.,a plasma treatment, a wet treatment, and/or a thermal treatment, isapplied to the bonding surfaces prior to the hybrid bonding. As a resultof the hybrid bonding, bonding contacts on different sides of secondbonding interface 538 can be inter-mixed, and dielectrics on thedifferent sides of second bonding interface 538 can be covalent-bonded.After the bonding, bit line 536 is electrically connected to firstchannel structure 516, and second single-crystal silicon layer 532becomes above array interconnect layer 534, according to someembodiments.

Method 900 proceeds to operation 914, as illustrated in FIG. 9, in whicha second channel structure extending vertically through a second memorystack above the second single-crystal silicon layer is formed. Thesecond memory stack can include interleaved conductor layers anddielectric layers. The second channel structure includes a lower plugextending into the second single-crystal silicon layer and includingsingle-crystal silicon, according to some embodiments.

As illustrated in FIG. 5I, a memory stack 542 including interleavedconductor layers and dielectric layers is formed on secondsingle-crystal silicon layer 532 by alternatingly depositing twodifferent dielectric layers (e.g., silicon nitride and silicon oxide)using one or more thin film deposition processes, followed by agate-replacement process later. In some embodiments, lower plugs 545,e.g., SEG plugs, are epitaxially grown into the bottom portion of eachchannel hole from second single-crystal silicon layer 532 using, forexample, VPE, LPE, MBE, or any combinations thereof. Lower plugs 545thus can include the same material as second single-crystal siliconlayer 532, i.e., single-crystal silicon. Channel structures 544including lower plugs 545 at the lower ends can then be formed bysubsequently depositing a memory film and a semiconductor channel alongthe sidewall of each channel hole above lower plug 545 using thin filmdeposition processes. A slit structure 546 and a TAC 548 each extendingvertically through memory stack 542 are formed, according to someembodiments. The fabrication processes for forming memory stack 542,channel structures 544, slit structure 546, and TAC 548 aresubstantially similar to their counterparts described above with respectto FIG. 5D and thus, are not repeated.

As illustrated in FIG. 5J, in some embodiments, an array interconnectlayer 554 including a bit line 556 and a third single-crystal siliconlayer 558 formed thereon are transferred from second silicon substrate510 (or a different donor substrate) to be bonded onto memory stack 542to form a third bonding interface 552. In some embodiments, formingarray interconnect layer 554 includes forming bit line 556 in one ormore ILD layers. As a result, bit line 556 can be electrically connectedto channel structure 544, and third single-crystal silicon layer 558becomes above array interconnect 554 layer. The fabrication processesfor transferring array interconnect layer 554 and third single-crystalsilicon layer 558 are substantially similar to their counterpartsdescribed above with respect to FIGS. 5E-5H and thus, are not repeated.It is understood that the fabrication processes described above fortransferring interconnect layer and single-crystal silicon layer andforming memory stack and channel structure on the single-crystal siliconlayer can be continuously repeated to increase the number of memorystacks in a multi-stack 3D memory device.

FIGS. 5A-5J and 9 illustrate exemplary fabrication process for forming amulti-stack 3D memory device having transferred interconnect layers.That is, array interconnect layers 534 and 554 and single-crystalsilicon layers 512 and 532 are non-monolithically formed on one or moredonor substrates (e.g., second silicon substrate 510) other than firstsilicon substrate 502 and later transferred above first siliconsubstrate 502 using a de-bonding process. It is understood thatinterconnect layers may be monolithically formed above first siliconsubstrate 502 by depositions of interconnects and ILD layers. FIGS.6A-6C illustrate an exemplary fabrication process for forming amulti-stack 3D memory device, according to some embodiments of thepresent disclosure. FIG. 10 is a flowchart of an exemplary method 1000for forming a multi-stack 3D memory device, according to someembodiments of the present disclosure. Examples of the 3D memory devicedepicted in FIGS. 6A-6C and 10 include 3D memory device 100 depicted inFIGS. 1A-1C. FIGS. 6A-6C and 10 will be described together. It isunderstood that the operations shown in method 1000 are not exhaustiveand that other operations can be performed as well before, after, orbetween any of the illustrated operations. Further, some of theoperations may be performed simultaneously, or in a different order thanshown in FIG. 10.

Referring to FIG. 10, method 1000 starts at operation 1002, in which asemiconductor device is formed on a first substrate. In someembodiments, the semiconductor device includes a peripheral devicelayer. In some embodiments, the semiconductor device includes a channelstructure extending vertically through a memory stack. An interconnectlayer is formed above the semiconductor device on the first substrate,according to some embodiments. The substrate can be a silicon substrate.

As illustrated in FIG. 6A, a peripheral device layer 604 is formed on afirst silicon substrate 602, and peripheral interconnect layer 606 isformed above peripheral device layer 604 on first silicon substrate 602.The fabrication processes for forming peripheral device layer 604 andperipheral interconnect layer 606 are substantially similar to those forforming the counterparts described above with respect to FIG. 5A andthus, are not repeated.

Method 1000 proceeds to operation 1004, as illustrated in FIG. 10, inwhich a first single-crystal silicon layer is transferred from a secondsubstrate (a “donor substrate”) onto the first semiconductor device onthe first substrate. In some embodiments, to transfer the firstsingle-crystal silicon layer, a heterogeneous interface is formed in thesecond substrate, for example, by implanting a dopant, such as hydrogen,into the second substrate. In some embodiments, to transfer the firstsingle-crystal silicon layer, the second substrate and the firstsubstrate are bonded in a face-to-face manner. In some embodiments, totransfer the first single-crystal silicon layer, the firstsingle-crystal silicon layer is split from the second substrate alongthe heterogeneous interface in the second substrate to leave the firstsingle-crystal silicon layer.

As illustrated in FIG. 6A, a first single-crystal silicon layer 610 istransferred from a second substrate (not shown) onto peripheralinterconnect layer 606 using a de-bonding process, resulting a firstbonding interface 608 between first single-crystal silicon layer 610 andperipheral interconnect layer 606. The fabrication processes for formingand transferring first single-crystal silicon layer 610 aresubstantially similar to those for forming the counterparts describedabove with respect to FIGS. 5B and 5C and thus, are not repeated.

Method 1000 proceeds to operation 1006, as illustrated in FIG. 10, inwhich a channel structure extending vertically through a memory stackabove the first single-crystal silicon layer is formed. The memory stackcan include interleaved conductor layers and dielectric layers. Thechannel structure includes a lower plug extending into the firstsingle-crystal silicon layer and including single-crystal silicon,according to some embodiments. In some embodiments, to form the memorystack, a dielectric stack including interleaved sacrificial layers anddielectric layers is formed on the first single-crystal silicon layer,and the memory stack is formed by replacing the sacrificial layers inthe dielectric stack with the conductor layers. For example, a slitopening extending vertically through the dielectric stack may be etched,the sacrificial layers in the dielectric stack may be replaced with theconductor layers through the slit opening, and a spacer and a conductorlayer may be subsequently deposited into the slit opening. In someembodiments, to form the channel structure, a channel hole is etchedthrough the dielectric stack and into the first single-crystal siliconlayer, the lower plug is epitaxially grown into a bottom portion of thechannel hole from the first single-crystal silicon layer, and a memoryfilm and a semiconductor channel are subsequently deposited along asidewall of the channel hole and above the lower plug.

As illustrated in FIG. 6A, a memory stack 612 including interleavedconductor layers and dielectric layers is formed on first single-crystalsilicon layer 610. Channel structures 614 extending vertically throughmemory stack 612 can be formed. The fabrication processes for formingmemory stack 612, channel structures 614, and other components, such asthe slit structure and TAC are substantially similar to those forforming the counterparts described above with respect to FIG. 5D andthus, are not repeated.

Method 1000 proceeds to operation 1008, as illustrated in FIG. 10, inwhich an interconnect layer is formed above the memory stack. Theinterconnect layer can include a bit line electrically connected to thechannel structure. As illustrated in FIG. 6A, an array interconnectlayer 616 is formed above memory stack 612. Array interconnect layer 616can include one or more ILD layers and interconnects therein, includinga bit line 618, formed using multiple processes. For example, theinterconnects can include conductive materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, electroplating, electroless plating, or any combination thereof.The ILD layers can include dielectric materials deposited by one or morethin film deposition processes including, but not limited to, CVD, PVD,ALD, or any combination thereof. In some embodiments, a passivationlayer 619 (e.g., an ILD layer) is formed on bit line 618 of arrayinterconnect layer 616, as shown in FIG. 6A. In some embodiments, arrayinterconnect layer 616 does not include passivation layer 619 on bitline 618.

Method 1000 proceeds to operation 1010, as illustrated in FIG. 10, inwhich a second single-crystal silicon layer is transferred from thesecond substrate onto the first interconnect layer. The donor substratefrom which the second single-crystal silicon layer may be the samesubstrate from which the first single-crystal silicon layer istransferred or a different donor substrate. As illustrated in FIG. 6B, asecond single-crystal silicon layer 624 is formed in a second siliconsubstrate 622 and transferred onto array interconnect layer 616 using ade-bonding process, resulting a second bonding interface 620 betweensecond single-crystal silicon layer 624 and array interconnect layer616. In some embodiments, second single-crystal silicon layer 624 isformed on passivation layer 619, as shown in FIG. 6B. In someembodiments, second single-crystal silicon layer 624 is formed directlyon bit line 618 without passivation layer 619 in-between. A well can beformed in second single-crystal silicon layer 624 using ion implantationand/or thermal diffusion. The fabrication processes for forming andtransferring second single-crystal silicon layer 624 are substantiallysimilar to those for forming the counterparts described above withrespect to FIGS. 5B and 5C and thus, are not repeated.

Method 1000 proceeds to operation 1012, as illustrated in FIG. 10, inwhich a second semiconductor device is formed above the secondsingle-crystal silicon layer. In some embodiments, the semiconductordevice includes a peripheral device layer. In some embodiments, thesemiconductor device includes a channel structure extending verticallythrough a memory stack.

As illustrated in FIG. 6C, a memory stack 626 including interleavedconductor layers and dielectric layers is formed on secondsingle-crystal silicon layer 624. Channel structures 632 extendingvertically through memory stack 626 can be formed. The fabricationprocesses for forming memory stack 626, channel structures 632, andother components, such as the slit structure and TAC are substantiallysimilar to those for forming the counterparts described above withrespect to FIG. 5D and thus, are not repeated. As illustrated in FIG.6C, an array interconnect layer 628 is formed above memory stack 626.Array interconnect layer 628 can include one or more ILD layers andinterconnects therein, including a bit line 630, formed using multipleprocesses. The fabrication processes for forming array interconnectlayer 628 are substantially similar to those for forming thecounterparts described above with respect to FIG. 6A and thus, are notrepeated.

It is understood that the fabrication processes described above fortransferring single-crystal silicon layer and forming memory stack andchannel structure on the single-crystal silicon layer can becontinuously repeated to increase the number of memory stacks in amulti-stack 3D memory device.

According to one aspect of the present disclosure, a method for forminga 3D memory device is disclosed. A memory stack including interleavedsacrificial layers and dielectric layers is formed above a firstsubstrate. A channel structure extending vertically through the memorystack is formed. A single-crystal silicon layer is formed in a secondsubstrate. An interconnect layer including a bit line is formed on thesingle-crystal silicon layer above the second substrate. Thesingle-crystal silicon layer and the interconnect layer formed thereonare transferred from the second substrate onto the memory stack abovethe first substrate, such that the bit line in the interconnect layer iselectrically connected to the channel structure.

In some embodiments, to form the single-crystal silicon layer, aheterogeneous interface is formed in the second substrate. In someembodiments, to form the heterogeneous interface in the secondsubstrate, a dopant is implanted into the second substrate. In someembodiments, the dopant includes hydrogen.

In some embodiments, to transfer the single-crystal silicon layer andthe interconnect layer, the single-crystal silicon layer and theinterconnect layer formed thereon are split from the second substratealong the heterogeneous interface in the second, and the single-crystalsilicon layer and the interconnect layer formed thereon and the firstsubstrate are bonded in a face-to-face manner.

In some embodiments, the bonding includes hybrid bonding.

In some embodiments, a thickness of the single-crystal silicon layer isbetween about 1 μm and about 100 μm.

In some embodiments, after transferring the single-crystal silicon layerand the interconnect layer, a semiconductor device is formed above thesingle-crystal silicon layer. The semiconductor device can include aperipheral device or another channel structure extending verticallythrough another memory stack.

In some embodiments, to form the interconnect layer, the bit line isformed in one or more interlayer dielectric (ILD) layers.

According to another aspect of the present disclosure, a method forforming a 3D memory device is disclosed. A semiconductor device isformed above a first substrate. A single-crystal silicon layer is formedin a second substrate. An interconnect layer including an interconnectis formed on the single-crystal silicon layer above the secondsubstrate. The single-crystal silicon layer and the interconnect layerformed thereon are transferred from the second substrate onto thesemiconductor device above the first substrate, such that theinterconnect is electrically connected to the semiconductor device, andthe single-crystal silicon layer becomes above the interconnect layer. Amemory stack including interleaved sacrificial layers and dielectriclayers is formed above the single-crystal silicon layer. A channelstructure extending vertically through the memory stack is formed. Thechannel structure includes a lower plug extending into thesingle-crystal silicon layer and including single-crystal silicon.

In some embodiments, to form the channel structure, the lower plug isepitaxially grown at a lower end of the channel structure from thesingle-crystal silicon layer, and a memory film and a semiconductorchannel are subsequently deposited along a sidewall of the channelstructure and above the lower plug.

In some embodiments, to form the single-crystal silicon layer, aheterogeneous interface is formed in the second substrate. In someembodiments, to form the heterogeneous interface in the secondsubstrate, a dopant is implanted into the second substrate. In someembodiments, the dopant includes hydrogen.

In some embodiments, to transfer the single-crystal silicon layer andthe interconnect layer, the single-crystal silicon layer and theinterconnect layer formed thereon are split from the second substratealong the heterogeneous interface in the second substrate, and thesingle-crystal silicon layer and the interconnect layer formed thereonand the first substrate are bonded in a face-to-face manner.

In some embodiments, the bonding includes hybrid bonding.

In some embodiments, a thickness of the single-crystal silicon layer isbetween about 1 μm and about 100 μm.

In some embodiments, the semiconductor device includes a peripheraldevice or another channel structure extending vertically through anothermemory stack.

According to still another aspect of the present disclosure, a 3D memorydevice includes a substrate, a first memory stack above the substrate, afirst channel structure extending vertically through the first memorystack, an interconnect layer above the first memory stack, a bondinginterface between the first memory stack and the interconnect layer, anda single-crystal silicon layer on the interconnect layer. The firstmemory stack includes a first plurality of interleaved conductor layersand dielectric layers. The interconnect layer includes a first bit lineelectrically connected to the first channel structure.

In some embodiments, the 3D memory device further includes a secondmemory stack including a second plurality of interleaved conductorlayers and dielectric layers above the single-crystal silicon layer, anda second channel structure extending vertically through the secondmemory stack. The second channel structure can include a lower plugextending into the single-crystal silicon layer and includingsingle-crystal silicon.

In some embodiments, the single-crystal silicon layer includes a wellbetween the interconnect layer and the second memory stack.

In some embodiments, a thickness of the single-crystal silicon layer isbetween about 1 μm and about 100 μm.

In some embodiments, the single-crystal silicon layer extends laterallyalong at least a width of the first memory stack.

In some embodiments, the interconnect layer includes the bit line in oneor more ILD layers.

The foregoing description of the specific embodiments will so reveal thegeneral nature of the present disclosure that others can, by applyingknowledge within the skill of the art, readily modify and/or adapt forvarious applications such specific embodiments, without undueexperimentation, without departing from the general concept of thepresent disclosure. Therefore, such adaptations and modifications areintended to be within the meaning and range of equivalents of thedisclosed embodiments, based on the teaching and guidance presentedherein. It is to be understood that the phraseology or terminologyherein is for the purpose of description and not of limitation, suchthat the terminology or phraseology of the present specification is tobe interpreted by the skilled artisan in light of the teachings andguidance.

Embodiments of the present disclosure have been described above with theaid of functional building blocks illustrating the implementation ofspecified functions and relationships thereof. The boundaries of thesefunctional building blocks have been arbitrarily defined herein for theconvenience of the description. Alternate boundaries can be defined solong as the specified functions and relationships thereof areappropriately performed.

The Summary and Abstract sections may set forth one or more but not allexemplary embodiments of the present disclosure as contemplated by theinventor(s), and thus, are not intended to limit the present disclosureand the appended claims in any way.

The breadth and scope of the present disclosure should not be limited byany of the above-described exemplary embodiments, but should be definedonly in accordance with the following claims and their equivalents.

What is claimed is:
 1. A method for forming a three-dimensional (3D)memory device, comprising forming a memory stack comprising interleavedsacrificial layers and dielectric layers above a first substrate;forming a channel structure extending vertically through the memorystack; forming a single-crystal silicon layer in a second substrate;forming an interconnect layer comprising a bit line on thesingle-crystal silicon layer above the second substrate; andtransferring the single-crystal silicon layer and the interconnect layerformed thereon from the second substrate onto the memory stack above thefirst substrate, such that the bit line in the interconnect layer iselectrically connected to the channel structure.
 2. The method of claim1, wherein forming the single-crystal silicon layer comprises forming aheterogeneous interface in the second substrate.
 3. The method of claim2, wherein forming the heterogeneous interface in the second substratecomprises implanting a dopant into the second substrate.
 4. The methodof claim 3, wherein the dopant comprises hydrogen.
 5. The method ofclaim 2, wherein transferring the single-crystal silicon layer and theinterconnect layer comprises: splitting the single-crystal silicon layerand the interconnect layer formed thereon from the second substratealong the heterogeneous interface in the second substrate; and bondingthe single-crystal silicon layer and the interconnect layer formedthereon and the first substrate in a face-to-face manner.
 6. The methodof claim 5, wherein the bonding comprises hybrid bonding.
 7. The methodof claim 1, wherein a thickness of the single-crystal silicon layer isbetween about 1 μm and about 100 μm.
 8. The method of claim 1, furthercomprising, after transferring the single-crystal silicon layer and theinterconnect layer, forming a semiconductor device above thesingle-crystal silicon layer.
 9. The method of claim 8, wherein thesemiconductor device comprises a peripheral device or another channelstructure extending vertically through another memory stack.
 10. Themethod of claim 1, wherein forming the interconnect layer comprisesforming the bit line in one or more interlayer dielectric (ILD) layers.11. A method for forming a three-dimensional (3D) memory device,comprising: forming a semiconductor device above a first substrate;forming a single-crystal silicon layer in a second substrate; forming aninterconnect layer comprising an interconnect on the single-crystalsilicon layer above the second substrate; transferring thesingle-crystal silicon layer and the interconnect layer formed thereonfrom the second substrate onto the semiconductor device above the firstsubstrate, such that the interconnect is electrically connected to thesemiconductor device, and the single-crystal silicon layer becomes abovethe interconnect layer; forming a memory stack comprising interleavedsacrificial layers and dielectric layers above the single-crystalsilicon layer; and forming a channel structure extending verticallythrough the memory stack, the channel structure comprising a lower plugextending into the single-crystal silicon layer and comprisingsingle-crystal silicon.
 12. The method of claim 11, wherein forming thechannel structure comprises: epitaxially growing the lower plug at alower end of the channel structure from the single-crystal siliconlayer; and subsequently depositing a memory film and a semiconductorchannel along a sidewall of the channel structure and above the lowerplug.
 13. The method of claim 11, wherein forming the single-crystalsilicon layer comprises forming a heterogeneous interface in the secondsubstrate.
 14. The method of claim 13, wherein forming the heterogeneousinterface in the second substrate comprises implanting a dopant into thesecond substrate.
 15. The method of claim 14, wherein the dopantcomprises hydrogen.
 16. The method of claim 13, wherein transferring thesingle-crystal silicon layer and the interconnect layer comprises:splitting the single-crystal silicon layer and the interconnect layerformed thereon from the second substrate along the heterogeneousinterface in the second substrate; and bonding the single-crystalsilicon layer and the interconnect layer formed thereon and the firstsubstrate in a face-to-face manner.
 17. The method of claim 16, whereinthe bonding comprises hybrid bonding.
 18. The method of claim 11,wherein a thickness of the single-crystal silicon layer is between about1 μm and about 100 μm.
 19. The method of claim 11, wherein thesemiconductor device comprises a peripheral device or another channelstructure extending vertically through another memory stack.
 20. Athree-dimensional (3D) memory device, comprising: a substrate; a firstmemory stack comprising a first plurality of interleaved conductorlayers and dielectric layers above the substrate; a first channelstructure extending vertically through the first memory stack; aninterconnect layer above the first memory stack and comprising a firstbit line electrically connected to the first channel structure; abonding interface between the first memory stack and the interconnectlayer; and a single-crystal silicon layer on the interconnect layer. 21.The 3D memory device of claim 20, further comprising: a second memorystack comprising a second plurality of interleaved conductor layers anddielectric layers above the single-crystal silicon layer; and a secondchannel structure extending vertically through the second memory stack,the second channel structure comprising a lower plug extending into thesingle-crystal silicon layer and comprising single-crystal silicon. 22.The 3D memory device of claim 20, wherein the single-crystal siliconlayer comprises a well between the interconnect layer and the secondmemory stack.
 23. The 3D memory device of claim 20, wherein a thicknessof the single-crystal silicon layer is between about 1 μm and about 100μm.
 24. The 3D memory device of claim 20, wherein the single-crystalsilicon layer extends laterally along at least a width of the firstmemory stack.
 25. The 3D memory device of claim 20, wherein theinterconnect layer comprises the bit line in one or more interlayerdielectric (ILD) layers.